Brian D Rizzi

US Patent:

20100314610, Dec 16, 2010

Filed:

Apr 9, 2010

Appl. No.:

12/757252

Inventors:

Samson Mil'shtein - Chelmsford MA, US
Amey V. Churi - Lowell MA, US
Brian J. Rizzi - Auburn NH, US
Peter N. Ersland - Littleton MA, US

International Classification:

H01L 29/778

US Classification:

257 24, 257194, 257E29248

Abstract:

A HEMT with improved electron confinement is formed by removing semiconductor cap material between the channel and the source and drain regions. The source and drain regions can be isolated from the gate region by an insulating layer. Significant noise reduction can be achieved as a result of these techniques. Also, removing the semiconductor cap material can provide an increased breakdown voltage for the transistor.

Address:

174 Fernwood Rd, Trumbull, CT 06611

Phone:

(203)2681781

VIN:

JTDKN3DU2A0032412

Make:

TOYOTA

Model:

PRIUS

Year:

2010