Brian W Wagner

US Patent:

7371282, May 13, 2008

Filed:

Jul 12, 2006

Appl. No.:

11/484691

Inventors:

Narsingh Bahadur Singh - Ellicott City MD, US
Brian Wagner - Baltimore MD, US
Mike Aumer - Laurel MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Linthicum MD, US

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

C30B 25/12
C30B 25/14

US Classification:

117104, 117 68, 117 84, 117 89

Abstract:

A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)(SiC)without any buffer layer is disclosed. The (AIN)(SiC)alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)(SiC)alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

US Patent:

7525099, Apr 28, 2009

Filed:

Jan 30, 2007

Appl. No.:

11/699335

Inventors:

Narsingh Bahadur Singh - Ellicott City MD, US
Aaron A. Pesetski - Gamrills MD, US
Andre Berghmans - Owing Mills MD, US
Brian P. Wagner - Baltimore MD, US
David Kahler - Arbutus MD, US
David J. Knuteson - Columbia MD, US
Darren Thomson - Ellicott City MD, US

Assignee:

Northrop Grumman Systems Corporation - Los Angeles CA

International Classification:

G01J 1/42

US Classification:

250372

Abstract:

A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site.

US Patent:

7683400, Mar 23, 2010

Filed:

Jun 26, 2006

Appl. No.:

11/474398

Inventors:

Narsingh B. Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Linthicum MD, US
Michael E. Aumer - Laurel MD, US
Andre Berghmans - Owing Mills MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US

Assignee:

Northrop Grumman Systems Corporation - Los Angeles CA

International Classification:

H01L 29/08

US Classification:

257194, 257 12, 257 19, 257 24, 257 76, 257 77, 257190, 257191, 257192, 257195, 257E27012, 257E29246, 257E29247, 257E29248, 257E29249, 257E29251, 257E29252

Abstract:

A SiMC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC SiMC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

US Patent:

7737534, Jun 15, 2010

Filed:

Jun 10, 2008

Appl. No.:

12/136193

Inventors:

Sean R. McLaughlin - Severn MD, US
Narsingh Bahadur Singh - Ellicott City MD, US
Brian Wagner - Baltimore MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Anthony A. Margarella - Columbia MD, US

Assignee:

Northrop Grumman Systems Corporation - Los Angeles CA

International Classification:

H01L 29/868

US Classification:

257656, 257E29085, 257E29336, 977774

Abstract:

A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

US Patent:

7830644, Nov 9, 2010

Filed:

Mar 5, 2007

Appl. No.:

11/713783

Inventors:

Narsingh B. Singh - Ellicott City MD, US
John J. Talvacchio - Ellicott City MD, US
Marc Sherwin - Catonsville MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Columbia MD, US
David Kahler - Arbutus MD, US
Brian Wagner - Baltimore MD, US
John D. Adam - Millersville MD, US

Assignee:

Northop Grumman Systems Corporation - Los Angeles CA

International Classification:

H01G 4/06
H01G 4/005

US Classification:

361311, 361303

Abstract:

Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCuTiOor LaGaSiO. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e. g. capacitors.

US Patent:

7855108, Dec 21, 2010

Filed:

Feb 26, 2010

Appl. No.:

12/713753

Inventors:

Narsingh B. Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Linthicum MD, US
Michael E. Aumer - Laurel MD, US
Andre Berghmans - Owing Mills MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US

Assignee:

Northrop Grumman Systems Corporation - Los Angeles CA

International Classification:

H01L 21/338

US Classification:

438172, 438167, 438191, 438604, 438606, 257E21403, 257E21407

Abstract:

A SiMC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC SiMC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

US Patent:

7888248, Feb 15, 2011

Filed:

Jul 13, 2007

Appl. No.:

11/826278

Inventors:

Narsingh Bahadur Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Columbia MD, US
David Kahler - Arbutus MD, US
Andre E. Berghmans - Owing Mills MD, US
Michael Aumer - Raleigh NC, US
Jerry W. Hedrick - Arnold MD, US
Marc E. Sherwin - Catonsville MD, US
Michael M. Fitelson - Columbia MD, US
Mark S. Usefara - Baltimore MD, US
Sean McLaughlin - Severn MD, US
Travis Randall - Baltimore MD, US
Thomas J. Knight - Silver Spring MD, US

Assignee:

Northrop Grumman Systems Corporation - Los Angeles CA

International Classification:

H01L 21/20

US Classification:

438492

Abstract:

A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

US Patent:

8278666, Oct 2, 2012

Filed:

Jun 23, 2010

Appl. No.:

12/821877

Inventors:

Narsingh B. Singh - Ellicott City MD, US
Sean R. McLaughlin - Severn MD, US
Thomas J. Knight - Silver Spring MD, US
Robert M. Young - Ellicott MD, US
Brian P. Wagner - Baltimore MD, US
David A. Kahler - Halethorpe MD, US
Andre E. Berghmans - Woodstock MD, US
David J. Knuteson - Ellicot City MD, US
Ty R. McNutt - Columbia MD, US
George M. Bates - Burke VA, US
Kenneth Petrosky - Severna Park MD, US

Assignee:

Northrop Grumman Systems Corporation - Falls Church VA

International Classification:

H01L 29/15
H01L 31/0312

US Classification:

257 77, 257 64, 257E21049, 257E21065, 438488, 438503, 117 93, 117105, 148 33

Abstract:

The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.