Bryan Newton Rhoads

US Patent:

52408787, Aug 31, 1993

Filed:

Apr 26, 1991

Appl. No.:

7/691951

Inventors:

John A. Fitzsimmons - Poughkeepsie NY
Janos Havas - Hopewell Junction NY
Margaret J. Lawson - Newburgh NY
Edward J. Leonard - Fishkill NY
Bryan N. Rhoads - Pine Bush NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21283

US Classification:

437187

Abstract:

A method of forming patterned films on a semiconductor substrate 10 includes the steps of depositing a hardened photo resist underlay 30 onto the substrate, then depositing a polyether sulfone release layer 32, then depositing a photo sensitive resist layer 34 and exposing an etching a metallization pattern 36, 38 to the substrate 10. The structure is then blanket deposited with a conductive layer 40 to thereby create a conductive contact stud 42. The film layer 40 and resist layer 34 are removed by dissolving the polyether sulfone layer 32 in an NMP solution and the photo resist underlayer 30 is then removed using a selective photo resist stripper composition.

US Patent:

57803633, Jul 14, 1998

Filed:

Apr 4, 1997

Appl. No.:

8/832999

Inventors:

Donald John Delehanty - Wappingers Falls NY
Rangarajan Jagannathan - South Burlington VT
Kenneth John McCullough - Fishkill NY
Donna Diane Miura - Hopewell Junction NY
George F. Ouimet - Millbrook NY
David Lee Rath - Stromville NY
Bryan Newton Rhoads - Pine Bush NY
Frank John Schmidt - Highland Falls NY

Assignee:

International Business Machines Coporation - Armonk NY

International Classification:

C23F 110

US Classification:

438748

Abstract:

An aqueous etchant composition containing about 0. 01 to about 15 percent by weight of sulfuric acid and about 0. 01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone is effective in removing polymer residue from a substrate, and especially from an integrated circuit chip having aluminum lines thereon.

US Patent:

52098150, May 11, 1993

Filed:

Jun 6, 1991

Appl. No.:

7/711224

Inventors:

Robert J. Fleming - Hopewell Junction NY
Margaret J. Lawson - Newburgh NY
Edward J. Leonard - Fishkill NY
Bryan N. Rhoads - Pine Bush NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

156629

Abstract:

A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.