Byung Jun Park

US Patent:

52815528, Jan 25, 1994

Filed:

Feb 23, 1993

Appl. No.:

8/023825

Inventors:

Clifford A. King - Union County NJ
Byung G. Park - Scotch Plains NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2120

US Classification:

437131

Abstract:

A method is described for making at least one MOS transistor on a silicon substrate. According to this method, a layer of a silicon dioxide material is formed on a principal surface of the substrate. The oxide layer is then patterned such that at least one source region and at least one drain region of the substrate are exposed. A layer of boron-doped germanium is then deposited on the exposed regions by RTCVD. The substrate is then heated such that boron diffuses from the germanium layer into the source and drain regions. The substrate principal surface can then be etched such that the germanium layer is removed with high selectivity.