Carlyle L Helber

US Patent:

46165967, Oct 14, 1986

Filed:

Oct 21, 1985

Appl. No.:

6/789867

Inventors:

Carlyle L. Helber - Fountain Valley CA
Frank A. Ludwig - Rancho Palos Verdes CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

B05C 1110
B05C 305

US Classification:

118603

Abstract:

An apparatus for use in electroless plating wherein the activity of the plating solution is controlled by regulating the oxygen content of the plating solution. The apparatus includes an outer container in which the stabilized, oxygen-rich plating solution is stored. An oxygen sparger is located in the outer container to introduce a predetermined amount of oxygen into the plating solution to stabilize it. A flux container and plating vessel are located inside the outer container and define a separate flux zone and a separate plating zone, respectively, through which the plating solution is passed. A nitrogen sparger is located within the flux container to purge all or some oxygen from the stabilized plating solution to provide an active plating solution. The active plating solution is passed from the flux container into the plating vessel where plating of the substrate takes place. Active plating solution continually flows from the plating vessel back to the oxygen-rich reservoir for oxygenation and storage prior to recycling back through the flux container and plating vessel.

US Patent:

52904237, Mar 1, 1994

Filed:

Apr 27, 1992

Appl. No.:

7/873848

Inventors:

Carlyle L. Helber - Fountain Valley CA
Frank A. Ludwig - Rancho Palos Verdes CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

C25D 502

US Classification:

205114

Abstract:

Processes for fabricating electrochemical interconnections between semiconductor chip pads and substrate pads. First, pads on a substrate are electrically shorted by depositing a film of conductive metal, conductive bumps are created on the substrate pads, and the pads on the substrate are aligned with pads on a semiconductor chip. Then, by electrochemically depositing metal to the bumps, electrical interconnections are formed between the semiconductor chips pads and the substrate pads. Finally, the film of conductive metal is removed to eliminate the electrical shorting. The resulting electrochemical interconnections are highly reliable and have high tensile strengths.