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Carter W Kaanta

age ~80

from Essex Junction, VT

Also known as:
  • Carter Welling Kaanta
  • Carter Nancy Kaanta
  • Carter W Foarta
  • Nancy Kaanta

Carter Kaanta Phones & Addresses

  • Essex Junction, VT
  • Burlington, VT
  • Palm Bay, FL
  • 1303 Grand View Rd, Colchester, VT 05446 • (802)8934163
  • 1308 Grand View Rd, Colchester, VT 05446 • (802)8934163
  • Marlborough, MA

Work

  • Company:
    Core concepts
  • Position:
    Owner

Languages

English

Industries

Management Consulting

Us Patents

  • Dram Cell With Stacked Capacitor Self-Aligned To Bitline

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  • US Patent:
    6429473, Aug 6, 2002
  • Filed:
    Jul 30, 1996
  • Appl. No.:
    08/690629
  • Inventors:
    John Edward Cronin - Milton VT
    Carter Welling Kaanta - Colchester VT
    Brian John Machesney - Burlington VT
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 27108
  • US Classification:
    257296, 257309
  • Abstract:
    A semiconductor chip with uniform topology includes a memory cell having a stacked capacitor self-aligned with a bitline. Thick insulation on the bitline and on interconnect wiring on supports circuits of the chip serves to provide the uniform topology and to provide for the self-alignment of the capacitor and bitline. Bitlines and support circuit interconnect wiring are both formed from the same level of metal but they are patterned in separate masking steps. The stacked capacitors are separated from each other by less than the minimum dimension of the photolithographic system used for fabrication.
  • Integrated Circuit Chip Wiring Structure With Crossover Capability And Method Of Manufacturing The Same

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  • US Patent:
    6576848, Jun 10, 2003
  • Filed:
    Nov 22, 1996
  • Appl. No.:
    08/755052
  • Inventors:
    John Edward Cronin - Milton VT
    John Andrew Hiltebeitel - South Burlington VT
    Carter Welling Kaanta - Colchester VT
    James Gardner Ryan - Newtown CT
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01R 909
  • US Classification:
    174261, 174262, 174264, 361767, 361771
  • Abstract:
    A wiring structure with crossover capability is disclosed. The wiring utilizes a connection stud in a contact layer, beneath the plane of the otherwise-intersecting lines as a crossover. Thus, a first wire in a first metallization layer passes below a second wire in a second metallization layer by overlapping contact with the connection stud in the contact layer. In manufacturing the wiring structure of the present invention, no intervening insulative or via layers are used between the contact layer, the first metallization layer and the second metallization layer. However, care must be taken in device layout on the substrate to ensure that the connection stud is located above isolation areas rather than active device areas.
  • Method Of Forming Borderless Contacts Using A Removable Mandrel

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  • US Patent:
    54666368, Nov 14, 1995
  • Filed:
    Sep 17, 1992
  • Appl. No.:
    7/946993
  • Inventors:
    John E. Cronin - Milton VT
    Carter W. Kaanta - Colchester VT
    Donald M. Kenney - Shelburne VT
    Michael L. Kerbaugh - Jericho VT
    Howard S. Landis - Underhill VT
    Brian J. Machesney - Burlington VT
    Paul Parries - Wappingers Falls NY
    Rosemary A. Previti-Kelly - Richmond VT
    John F. Rembetski - Austin TX
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 2144
  • US Classification:
    437187
  • Abstract:
    A semiconductor fabrication process for forming borderless contacts (130, 170, 172) using a removable mandrel (110). The process involves depositing a mandrel on an underlying barrier layer (100) designed to protect underlying structures (40) formed on a substrate (24). The mandrel is made from a material that will etch at a faster rate than the barrier layer so as to permit the formation of openings in the mandrel to be stopped on the barrier layer without penetrating such layer. After depositing a contact (130) in a first opening (120) formed in the mandrel, a second opening (140) is formed and a second contact (170) is deposited therein. Thereafter, the mandrel is removed and replaced with a layer of solid dielectric material (180).
  • Stud Formation Method Optimizing Insulator Gap-Fill And Metal Hole-Fill

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  • US Patent:
    47583061, Jul 19, 1988
  • Filed:
    Aug 17, 1987
  • Appl. No.:
    7/086120
  • Inventors:
    John E. Cronin - Milton VT
    Carter W. Kaanta - Colchester VT
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    B44C 122
    C03C 1500
    C03C 2506
    C23F 102
  • US Classification:
    156643
  • Abstract:
    A method of forming a conductive structure on a substrate by using both of the via-filling and stud-forming metallization techniques. A stud that is approximately one-half the thickness of the final stud is defined on a conductive layer. The stud-forming mask is left in place. Then the sidewalls of the mask are positively tapered, and an insulator layer is deposited on the substrate. The insulator is then etched to expose the stud forming mask, and the mask is removed. The sidewalls of the vias thus defined in the insulator layer are then positively tapered. By positively tapering both the stud mask prior to insulator deposition and the insulator via prior to metal deposition, insulator gap-fill and metal hole-fill problems are eliminated.
  • Reducing Pitch With Continuously Adjustable Line And Space Dimensions

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  • US Patent:
    57958300, Aug 18, 1998
  • Filed:
    Jul 26, 1996
  • Appl. No.:
    8/686481
  • Inventors:
    John E. Cronin - Milton VT
    Carter W. Kaanta - Colchester VT
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 213065
    C03C 2506
  • US Classification:
    438696
  • Abstract:
    A method of forming sub-lithographic elements and spaces therebetween where the pitch may be reduced with continuously adjustable line and space dimensions, and a structure resulting from the method, are disclosed. A plurality of spaced convertible members are formed on a substrate. A portion of each member is then converted, thereby reducing the dimensions of the unconverted portion of the member while increasing the width of the member plus its converted layer. A conformal layer of material is then deposited over the converted members, followed by directional etching of the conformal layer. The unconverted portion of the member is then removed. The line and space dimensions can be continuously adjusted by altering either or both of the member's converted layer and conformal layer.
  • Refractory Metal-Titanium Nitride Conductive Structures

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  • US Patent:
    57604754, Jun 2, 1998
  • Filed:
    Nov 14, 1994
  • Appl. No.:
    8/339317
  • Inventors:
    John Edward Cronin - Milton VT
    Carter Welling Kaanta - Colchester VT
    Michael Albert Leach - Bristol VT
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 2348
  • US Classification:
    257758
  • Abstract:
    The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin continuous layer to titanium--titanium nitride and a thick layer of a refractory metal, e. g. tungsten, overlying the titanium nitride layer.
  • Self-Aligned Metallurgy

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  • US Patent:
    57599114, Jun 2, 1998
  • Filed:
    Aug 22, 1995
  • Appl. No.:
    8/517782
  • Inventors:
    John Edward Cronin - Milton VT
    Carter Welling Kaanta - Colchester VT
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 2128
    H01L 2131
  • US Classification:
    438622
  • Abstract:
    A method is provided for filling undesired sublithographic contact hole defects in a semiconductor structure caused by misalignment and undesirable overlap of metal line images over contact openings during photolithographic patterning. Unwanted contact between conductive metallization levels through these defects is thereby diminished. The method also provides self-alignment of the lines and contact holes for subsequent formation of stud via connections through which contact is desired to underlying metallization levels. Deposition of a conformal sacrificial material film fills the small, undesired sublithographic contact hole image formed and covers both mask surfaces through which the misaligned line image and contact opening were etched. Isotropic etching removes the conformal layer from all planar surfaces except those of the undesired sublithographic contact hole image. Translation into the underlying insulating layer results in the formation of only contact holes through which contact with underlying substrate metallization is desired.
  • Gray Level Mask

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  • US Patent:
    53344677, Aug 2, 1994
  • Filed:
    Feb 25, 1993
  • Appl. No.:
    8/022516
  • Inventors:
    John E. Cronin - Milton VT
    Paul A. Farrar - So. Burlington VT
    Carter W. Kaanta - Colchester VT
    James G. Ryan - Essex Junction VT
    Andrew J. Watts - Milton VT
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    G03F 900
  • US Classification:
    430 5
  • Abstract:
    A gray level mask suitable for photolithography is constructed of a transparent glass substrate which supports plural levels of materials having different optical transmissivities. In the case of a mask employing only two of these levels, one level may be constructed of a glass made partially transmissive by substitution of silver ions in place of metal ions of alkali metal silicates employed in the construction of the glass. The second layer may be made opaque by construction of the layer of a metal such as chromium. The mask is fabricated with the aid of a photoresist structure which is etched in specific regions by photolithographic masking to enable selective etching of exposed regions of the level of materials of differing optical transmissivities. Various etches are employed for selective etching of the photoresist, the metal of one of the layers, and the glass of the other of the layers. The etches include plasma etch with chloride ions to attack the chromium of the opaque layer, compounds of fluorine to attack the glass layer, and reactive ion etching with oxygen to attack the photoresist structure.

Resumes

Carter Kaanta Photo 1

Owner

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Location:
P/O Box 23, Essex Junction, VT
Industry:
Management Consulting
Work:
Core Concepts
Owner
Languages:
English

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Carter Kaanta Photo 2

Carter Kaanta

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Friends:
Bradley Kaanta, John Cohn, Dee Seesurat, Sandra Lacroix

Classmates

Carter Kaanta Photo 3

East High School, Denver,...

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Graduates:
Carter Kaanta (1958-1962),
Ethel Carter (1986-1990),
Barbara Allphin (1962-1966),
Jayne Wilson (1959-1960),
Steve Johnstone (1963-1967)

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