Cecilia A Montgomery

US Patent:

6969569, Nov 29, 2005

Filed:

Feb 25, 2004

Appl. No.:

10/788117

Inventors:

Melvin Warren Montgomery - Camas WA, US
Cecilia Annette Montgomery - Camas WA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G03F001/00
G03C005/00

US Classification:

430 5, 430322, 430325

Abstract:

In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

US Patent:

7208249, Apr 24, 2007

Filed:

Sep 30, 2002

Appl. No.:

10/261972

Inventors:

Melvin Warren Montgomery - Camas WA, US
Alex Buxbaum - Portland OR, US
Scott Edward Fuller - Portland OR, US
Cecilia Annette Montgomery - Camas WA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G03F 9/00
G03F 7/30

US Classification:

430 5, 430326, 430330

Abstract:

We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70 C. , and preferably at temperatures in the range of 110 C. to 150 C.

US Patent:

20020076626, Jun 20, 2002

Filed:

Nov 21, 2001

Appl. No.:

09/990684

Inventors:

Melvin Montgomery - Camas WA, US
Cecilia Montgomery - Camas WA, US

Assignee:

APPLIED MATERIALS, INC.

International Classification:

G03F009/00

US Classification:

430/005000

Abstract:

In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.