Cen Tan

US Patent:

20200395223, Dec 17, 2020

Filed:

Mar 26, 2018

Appl. No.:

16/955012

Inventors:

- Santa Clara CA, US
Scott B. CLENDENNING - Portland OR, US
Cen TAN - Beaverton OR, US
Marie KRYSAK - Portland OR, US

International Classification:

H01L 21/311
H01L 21/768
H01L 21/8234
H01L 23/522
H01L 23/532
H01L 27/088
H01L 29/66
H01L 29/78

Abstract:

Selective etching and controlled atomic layer etching of transition metal oxide films for device fabrication, and the resulting devices, are described. In an example, method of dry etching a film includes forming a transition metal oxide film having a latent pore-forming material therein. The method also includes removing a surface portion of the latent pore-forming material of the transition metal oxide film to form a porous region of the transition metal oxide film. The method also includes removing the porous region of the transition metal oxide film.

US Patent:

20200168462, May 28, 2020

Filed:

Sep 27, 2017

Appl. No.:

16/637177

Inventors:

- Santa Clara CA, US
Scott B. CLENDENNING - Portland OR, US
Florian GSTREIN - Portland OR, US
Cen TAN - Beaverton OR, US

International Classification:

H01L 21/28
H01L 21/02
H01L 29/51
H01L 21/306

Abstract:

Embodiments herein describe techniques for a semiconductor device including a Ge substrate. A passivation layer may be formed above the Ge substrate, where the passivation layer may include one or more molecular monolayers with atoms of one or more group 15 elements or group 16 elements. In addition, a low-k interlayer may be above the passivation layer, and a high-k interlayer may be above the low-k interlayer. Furthermore, a metal contact may be above the high-k interlayer. Other embodiments may be described and/or claimed.

US Patent:

20170023513, Jan 26, 2017

Filed:

Apr 3, 2015

Appl. No.:

15/301085

Inventors:

- Ithaca NY, US
Cen TAN - Fremont CA, US
Kenneth HERNANDEZ-BURGOS - Ithaca NY, US
Hector D. ABRUNA - Ithaca NY, US
Nicole RITZERT - Renfrew PA, US
Daniel C. RALPH - Ithaca NY, US
Wan LI - Kensington CA, US

International Classification:

G01N 27/30
C25D 9/02
G01N 27/416
B01L 3/00
G01N 27/414

Abstract:

Electropolymerized polymer or copolymer films on a conducting substrate (e.g., graphene) and methods of making such films. The films may be part of multilayer structures. The films can be formed by anodic or cathodic electropolymerization of monomers. The films and structures (e.g., multilayer structures) can be used in devices such as, for example, electrochromic devices, electrical-energy storage devices, photo-voltaic devices, field-effect transistor devices, electrical devices, electronic devices, energy-generation devices, and microfluidic devices.