Search

Chao E Li

age ~43

from Atherton, CA

Also known as:
  • Li Chao

Chao Li Phones & Addresses

  • Atherton, CA
  • San Carlos, CA
  • Emeryville, CA
  • Berkeley, CA
  • 2120 Medford Rd, Ann Arbor, MI 48104
  • Hagerstown, MD

Isbn (Books And Publications)

Location-based Services and Geo-information Engineering

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Author
Chao Li

ISBN #
0470857366

Location-based Services and Geo-information Engineering

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Author
Chao Li

ISBN #
0470857374

Medicine Doctors

Chao Li Photo 1

Chao Li

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Name / Title
Company / Classification
Phones & Addresses
Chao Quan Li
President
CHAO LI ELECTRICAL, INC
Electrical Contractor
996 Randolph St, San Francisco, CA 94132
(415)2399688
Chao B. Li
MEBOOKS, LLC
Chao Li
Principal
Chao's Family Service
Individual and Family Services, Nsk · Individual/Family Services
1474 42 Ave, San Francisco, CA 94122

Us Patents

  • Anomaly Detection For An E-Commerce Pricing System

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  • US Patent:
    20220237670, Jul 28, 2022
  • Filed:
    Apr 15, 2022
  • Appl. No.:
    17/721594
  • Inventors:
    - Bentonville AR, US
    Elham SHAABANI - Redwood City CA, US
    Chao LI - San Carlos CA, US
    Matyas A. SUSTIK - San Francisco CA, US
  • International Classification:
    G06Q 30/02
    G06K 9/62
    G06Q 20/20
    G06N 20/00
    G06Q 10/06
  • Abstract:
    This application relates to apparatus and methods for identifying anomalies within data, such as pricing data. In some examples, a computing device receives data updates and selects a machine learning model to apply to the data update. The computing device may train the machine learning model with features generated based on historical purchase order data. An anomaly score is generated based on application of the machine learning model. Based on the anomaly score, the data update is either allowed, or denied. In some examples, the computing device re-trains the machine learning model with detected anomalies. In some embodiments, the computing device prioritizes detected anomalies for further investigation. In some embodiments, the computing device identifies the cause of the anomalies by identifying at least one feature that is causing the anomaly.
  • Multiple Spacer Patterning Schemes

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  • US Patent:
    20230093450, Mar 23, 2023
  • Filed:
    Nov 30, 2022
  • Appl. No.:
    18/072457
  • Inventors:
    - Santa Clara CA, US
    Rui CHENG - Santa Clara CA, US
    Karthik JANAKIRAMAN - San Jose CA, US
    Zubin HUANG - Santa Clara CA, US
    Diwakar KEDLAYA - Santa Clara CA, US
    Meenakshi GUPTA - San Jose CA, US
    Srinivas GUGGILLA - San Jose CA, US
    Yung-chen LIN - Gardena CA, US
    Hidetaka OSHIO - Tokyo, JP
    Chao LI - Santa Clara CA, US
    Gene LEE - San Jose CA, US
  • International Classification:
    H01L 21/033
    H01L 21/311
    H01L 21/3213
  • Abstract:
    The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.
  • Methods And Apparatus For Anomaly Detections

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  • US Patent:
    20200380570, Dec 3, 2020
  • Filed:
    May 30, 2019
  • Appl. No.:
    16/427238
  • Inventors:
    - Bentonville AR, US
    Elham SHAABANI - Redwood City CA, US
    Chao LI - San Carlos CA, US
    Matyas A. SUSTIK - San Francisco CA, US
  • International Classification:
    G06Q 30/02
    G06K 9/62
    G06Q 10/06
    G06N 20/00
    G06Q 20/20
  • Abstract:
    This application relates to apparatus and methods for identifying anomalies within data, such as pricing data. In some examples, a computing device receives data updates and selects a machine learning model to apply to the data update. The computing device may train the machine learning model with features generated based on historical purchase order data. An anomaly score is generated based on application of the machine learning model. Based on the anomaly score, the data update is either allowed, or denied. In some examples, the computing device re-trains the machine learning model with detected anomalies. In some embodiments, the computing device prioritizes detected anomalies for further investigation. In some embodiments, the computing device identifies the cause of the anomalies by identifying at least one feature that is causing the anomaly.
  • Methods And Apparatus For Anomaly Detections

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  • US Patent:
    20200380571, Dec 3, 2020
  • Filed:
    May 30, 2019
  • Appl. No.:
    16/427241
  • Inventors:
    - Bentonville AR, US
    Elham SHAABANI - Redwood City CA, US
    Chao LI - San Carlos CA, US
    Matyas A. SUSTIK - San Francisco CA, US
  • International Classification:
    G06Q 30/02
    G06K 9/00
    G06F 17/11
    G06Q 10/06
    G06N 20/00
    G06Q 20/20
  • Abstract:
    This application relates to apparatus and methods for identifying anomalies within data, such as pricing data. In some examples, a computing device receives data updates and selects a machine learning model to apply to the data update. The computing device may train the machine learning model with features generated based on historical purchase order data. An anomaly score is generated based on application of the machine learning model. Based on the anomaly score, the data update is either allowed, or denied. In some examples, the computing device re-trains the machine learning model with detected anomalies. In some embodiments, the computing device prioritizes detected anomalies for further investigation. In some embodiments, the computing device identifies the cause of the anomalies by identifying at least one feature that is causing the anomaly.
  • Multiple Spacer Patterning Schemes

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  • US Patent:
    20200335338, Oct 22, 2020
  • Filed:
    Mar 17, 2020
  • Appl. No.:
    16/821759
  • Inventors:
    - Santa Clara CA, US
    Rui CHENG - Santa Clara CA, US
    Karthik JANAKIRAMAN - San Jose CA, US
    Zubin HUANG - Santa Clara CA, US
    Meenakshi GUPTA - San Jose CA, US
    Srinivas GUGGILLA - San Jose CA, US
    Yung-chen LIN - Gardena CA, US
    Hidetaka OSHIO - Tokyo, JP
    Chao LI - Santa Clara CA, US
    Gene LEE - San Jose CA, US
  • International Classification:
    H01L 21/033
  • Abstract:
    The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.
  • Multiple Spacer Patterning Schemes

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  • US Patent:
    20200335339, Oct 22, 2020
  • Filed:
    May 5, 2020
  • Appl. No.:
    16/867095
  • Inventors:
    - Santa Clara CA, US
    Rui CHENG - Santa Clara CA, US
    Karthik JANAKIRAMAN - San Jose CA, US
    Zubin HUANG - Santa Clara CA, US
    Diwakar KEDLAYA - Santa Clara CA, US
    Meenakshi GUPTA - San Jose CA, US
    Srinivas GUGGILLA - San Jose CA, US
    Yung-chen LIN - Gardena CA, US
    Hidetaka OSHIO - Tokyo, JP
    Chao LI - Santa Clara CA, US
    Gene LEE - San Jose CA, US
  • International Classification:
    H01L 21/033
  • Abstract:
    The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.
  • Silane Based Surfaces With Extreme Wettabilities

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  • US Patent:
    20200048841, Feb 13, 2020
  • Filed:
    Oct 18, 2019
  • Appl. No.:
    16/657536
  • Inventors:
    - Ann Arbor MI, US
    Chao LI - Ann Arbor MI, US
  • Assignee:
    THE REGENTS OF THE UNIVERSITY OF MICHIGAN - Ann Arbor MI
  • International Classification:
    D21H 19/10
    D21H 17/13
    D21H 21/16
    D21H 17/11
    C09D 5/00
  • Abstract:
    In various aspects, the present disclosure provides porous materials having extreme wettability to polar or non-polar fluids, such as water and oil. The porous material has a coated surface comprising a low surface energy fluoroalkyl silane that is treated to exhibit at least one type of extreme wettability. In certain aspects, the disclosure provides a porous material comprising a coated surface that is both superhydrophobic and oleophilic, or superhydrophobic and superoleophobic, or superhydrophilic and oleophobic, by way of example. Methods of forming a porous surface having a predetermined wettability are also provided. Other embodiments include fluidic devices that incorporate porous materials having extreme wettabilities, such as microfluidic devices and separators.
  • Silane Based Surfaces With Extreme Wettabilities

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  • US Patent:
    20160251803, Sep 1, 2016
  • Filed:
    Oct 10, 2014
  • Appl. No.:
    15/027995
  • Inventors:
    - Ann Arbor MI, US
    Chao LI - Ann Arbor MI, US
  • Assignee:
    THE REGENTS OF THE UNIVERSITY OF MICHIGAN - Ann Arbor MI
  • International Classification:
    D21H 19/10
    C09D 5/00
  • Abstract:
    In various aspects, the present disclosure provides porous materials having extreme wettability to polar or non-polar fluids, such as water and oil. The porous material has a coated surface comprising a low surface energy fluoroalkyl silane that is treated to exhibit at least one type of extreme wettability. In certain aspects, the disclosure provides a porous material comprising a coated surface that is both superhydrophobic and oleophilic, or superhydrophobic and superoleophobic, or superhydrophilic and oleophobic, by way of example. Methods of forming a porous surface having a predetermined wettability are also provided. Other embodiments include fluidic devices that incorporate porous materials having extreme wettabilities, such as microfluidic devices and separators.

Lawyers & Attorneys

Chao Li Photo 2

Chao Li - Lawyer

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Address:
(891)0185396 (Office)
Licenses:
New York - Currently registered 2009
Education:
New York University, School of Law
Chao Li Photo 3

Chao Li - Lawyer

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ISLN:
924296214
Admitted:
2009

Resumes

Chao Li Photo 4

Business Analyst At Thomson Reuters

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Position:
Business Analyst at Thomson Reuters
Location:
Beijing City, China
Industry:
Financial Services
Work:
Thomson Reuters - Z-Park, Haidian District, Beijing since Sep 2011
Business Analyst

N/A Independent Dec 2010 - Dec 2010
Private Placement Agent

Rainbow Nov 2009 - Aug 2010
assistant manager
Education:
University of Bridgeport 2007 - 2009
MBA, MBA
Chao Li Photo 5

Chao Liang Li

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Chao Li Photo 6

Chao Li

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Chao Li Photo 7

Chao Li

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Chao Li Photo 8

Chao Li

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Chao Li Photo 9

Landscape Designer

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Work:
Snøhetta
Landscape Designer
Chao Li Photo 10

Chao Li

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Chao Li Photo 11

Chao Li

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Location:
United States

Myspace

Chao Li Photo 12

Chao Li

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Locality:
DENVER
Gender:
Male
Birthday:
1949
Chao Li Photo 13

chao li

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Locality:
BROOKLYN, New York
Gender:
Male
Birthday:
1951
Chao Li Photo 14

chao li

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Locality:
East, United Kingdom
Gender:
Male
Birthday:
1952
Chao Li Photo 15

Chao Li

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Locality:
, China
Gender:
Male
Birthday:
1942

Googleplus

Chao Li Photo 16

Chao Li

Work:
Alcatel-lucent - Software consultant engineer
Chao Li Photo 17

Chao Li

Lived:
Waterford, MI
Education:
Eastern Michigan University
Chao Li Photo 18

Chao Li

Work:
IHealth Lab Inc - App product manager (2008)
Education:
Tianjin university
Chao Li Photo 19

Chao Li

Chao Li Photo 20

Chao Li

Education:
University of California, San Diego - Computer Science
Tagline:
My eyes are greedy
Chao Li Photo 21

Chao Li

Education:
Xiamen University
Chao Li Photo 22

Chao Li

Education:
University of California, Irvine - EECS, University of Technology and Science Beijing - EECS
Chao Li Photo 23

Chao Li

Flickr

Plaxo

Chao Li Photo 32

Chao Li

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Ph.D at CWI
Chao Li Photo 33

Chao Li

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MD at SUNY Downstate Medical Center

Classmates

Chao Li Photo 34

Chao Li

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Schools:
Guillaume Vignal School Brossard Kuwait 1993-1997, La Mennais High School La Prairie Kuwait 1997-2002, River of Meadows High School Montreal Kuwait 1998-2002
Community:
Annie Pommainville, Jonathan Ghali, Emilie Paul, Genevieve Hamelin, Julie Lavallee, Virginie Vincent, Stephanie Caron, Amelia Lavoie
Chao Li Photo 35

Guillaume Vignal School, ...

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Graduates:
Chao LI (1993-1997),
Tania Vincent (1988-1992),
Vincent Fournier (1995-1999),
Pain Your (1985-1989),
Henry Pierre (1982-1986)
Chao Li Photo 36

President Thomas Jefferso...

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Graduates:
Chao Li (1974-1980),
Michael Henry (1977-1978)
Chao Li Photo 37

River of Meadows High Sch...

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Graduates:
Lyson Gosselin (1976-1980),
Chao Li (1998-2002),
Mathieu Sauvageau (2000-2004),
Genevive BAril (1997-2001),
Martine Delisle (1984-1989)
Chao Li Photo 38

Morrow High School, Brook...

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Graduates:
da Chao LI (1990-1994),
Irina Markovskaya (1997-2001),
Michael Piccirillo (1973-1977),
Yan Volodarsky (1996-2000)
Chao Li Photo 39

South Harrison High Schoo...

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Graduates:
Tomi Standage (2004-2008),
Christy Galvan (1986-1990),
Shanda Maxwell (1979-1983),
Chao LI (2002-2006),
Champagne Murphy (2000-2001)
Chao Li Photo 40

Edward Bleeker Junior Hig...

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Graduates:
Jian Chao LI (1995-1999),
Danny Luk (1976-1978),
John McCready (1988-1992),
Rachel Schiffman (1988-1990)
Chao Li Photo 41

Walnut Grove High School,...

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Graduates:
Cody Sullivan (2004-2006),
chao LI (1997-2001),
Stephen Schneider (2001-2005),
Tj Code (2001-2005),
Jeremy Schmidt (1993-1997)

Youtube

Chao Li | Stable minimal hypersurfaces in 4-m...

General Relativity Workshop 5/3/2022 Speaker: Chao Li Title: Stable mi...

  • Duration:
    58m

Chao Li - 1/2 Geometric and Arithmetic Theta ...

Geometric/arithm... theta correspondences provide correspondences bet...

  • Duration:
    1h 2m 31s

Chao Li - 2/2 Geometric and Arithmetic Theta ...

Geometric/arithm... theta correspondences provide correspondences bet...

  • Duration:
    1h 18m

Level raising mod 2 and arbitrary 2-Selmer ra...

Chao Li Harvard University December 4, 2014 We prove a level raising m...

  • Duration:
    1h 4m 33s

Advancements in Cataract Surgery | Dr. Chao L...

-and-treatments/... Schedule an appointment with Dr. Li at our SouthP...

  • Duration:
    3m 26s

Chao Li - Scalar curvature and the dihedral r...

In 2013, Gromov proposed a geometric comparison theorem for metrics wi...

  • Duration:
    51m 52s

Facebook

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Chao Li

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Chao Li Photo 43

Chao Li

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Chao Li Photo 44

Chao Li

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Chao Li Photo 45

Chao Neng Li

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Chao Li Photo 46

Chao Yang Li

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Chao Li Photo 47

Alexhuang Chao Li

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Chao Li Photo 48

Chao Mei Li

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Chao Li Photo 49

Chao Li

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