Chao Shih Li

US Patent:

20110136304, Jun 9, 2011

Filed:

Jun 11, 2010

Appl. No.:

12/814254

Inventors:

Eric W. Wong - Los Angeles CA, US
Brian D. Hunt - La Crescenta CA, US
Rajay Kumar - Huntington Beach CA, US
Chao Li - Arcadia CA, US

Assignee:

ETAMOTA CORPORATION - Pasadena CA

International Classification:

H01L 21/338
B82Y 40/00

US Classification:

438167, 977742, 257E2145

Abstract:

Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than desired. By altering the width and spacing of the slotting, nanotubes have a certain length or greater can be removed. Once the lengths of nanotubes are confined to a certain or expected range, the electrical breakdown approach of removing nanotubes is more effective. In a second technique, a Schottky barrier is created at one electrode (e.g., drain or source). This Schottky barrier helps prevent the inadvertent removal the desirable nanotubes when using the electrical breakdown approach. The first and second techniques can be used individually or in combination with each other.