Charles Anthony Fields

US Patent:

6566693, May 20, 2003

Filed:

Sep 19, 2000

Appl. No.:

09/665340

Inventors:

Stephen Thomas, III - West Los Angeles CA
Charles Fields - Malibu CA

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 310328

US Classification:

257197, 438312, 438320

Abstract:

High-speed, low capacitance heterojunction bipolar transistors (HBTs) and a method for their fabrication are disclosed. The devices are fabricated by a manufacturable process which moves patterning and deposition of the base post up versus the current manufacturing process, thus permitting fabrication of a smaller base post and base metal contact and reducing the base-collector capacitance.

US Patent:

6916720, Jul 12, 2005

Filed:

Jul 5, 2002

Appl. No.:

10/190223

Inventors:

Kursad Kiziloglu - Los Angeles CA, US
Charles H. Fields - Malibu CA, US
Adele E. Schmitz - Newbury Park CA, US

Assignee:

Hughes Electronics Corporation - El Segundo CA

International Classification:

H01L021/20

US Classification:

438382, 438384, 438712, 438745

Abstract:

A method for making a thin film device on integrated circuits including the steps of applying a first photoresist layer to a first surface, and patterning the first photoresist layer to have at least a first opening that exposes the first surface. A film is deposited onto the first photoresist layer, wherein a portion of the deposited film is deposited onto the exposed first surface. A second photoresist layer is applied onto the deposited layer, wherein the second photoresist layer is applied to the portion of the deposited film within the first opening and covers a second portion of the deposited layer, wherein the first photoresist layer and the second photoresist layer assist in the defining of the deposited layer. The deposited layer, first photoresist layer, and second photoresist layer are selectively removed, therein exposing the first surface and the second portion of the deposited layer.