Charles E Hunt

US Patent:

6465357, Oct 15, 2002

Filed:

Jul 5, 2001

Appl. No.:

09/900299

Inventors:

Jeffrey J. Peterson - Folsom CA
Charles E. Hunt - Davis CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 21311

US Classification:

438694, 438 52, 438739

Abstract:

One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids created by a first etching operation. The process then forms a second layer composed of a second material over the first layer, so that the a second layer fills in portions of voids in the first layer created by the first etching operation. Next, the process performs a chemo-mechanical polishing operation on the second layer down to the first layer so that only remaining portions of the second layer, within the voids created by the first etching operation, remain. The system then forms a third layer composed of a third material over the first layer and the remaining portions of the second layer, and performs a second etching operation using a selective etchant to remove the remaining portions of the second layer, thereby creating voids between the first layer and the third layer.

US Patent:

6545299, Apr 8, 2003

Filed:

Jun 18, 2002

Appl. No.:

10/174625

Inventors:

Jeffrey J. Peterson - Folsom CA
Charles E. Hunt - Davis CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 31072

US Classification:

257183, 257 65, 257 55, 257 19, 257200, 257616

Abstract:

One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids created by a first etching operation. The process then forms a second layer composed of a second material over the first layer, so that the second layer fills in portions of voids in the first layer created by the first etching operation. Next, the process performs a chemo-mechanical polishing operation on the second layer down to the first layer so that only remaining portions of the second layer, within the voids created by the first etching operation, remain. The system then forms a third layer composed of a third material over the first layer and the remaining portions of the second layer, and performs a second etching operation using a selective etchant to remove the remaining portions of the second layer, thereby creating voids between the first layer and the third layer.

US Patent:

6559058, May 6, 2003

Filed:

Jan 31, 2002

Appl. No.:

10/061501

Inventors:

Jeffrey J. Peterson - Folsom CA
Charles E. Hunt - Davis CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 21302

US Classification:

438710, 438 82, 438 77, 438459

Abstract:

One embodiment of the present invention provides a system for using selective etching to form three-dimensional components on a substrate. The system operates by receiving a substrate composed of a first material. Next, a second layer composed of a second material is formed on selected portions of the substrate. A third layer composed of a third material is then formed over the substrate and the second layer. Finally, an etching operation using a selective etchant is used to remove the second layer, thereby leaving the substrate, which forms a first active layer, and leaving the third layer, which forms a second active layer.

US Patent:

6642154, Nov 4, 2003

Filed:

Jul 5, 2001

Appl. No.:

09/900300

Inventors:

Jeffrey J. Peterson - Folsom CA
Charles E. Hunt - Davis CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 21302

US Classification:

438734, 438700

Abstract:

One embodiment of the present invention provides a process for selective etching during semiconductor manufacturing. The process starts by receiving a silicon substrate with a first layer composed of a first material, which is covered by a second layer composed of a second material. The process then performs a first etching operation that etches some but not all of the second layer, so that a portion of the second layer remains covering the first layer. Next, the system performs a second etching operation to selectively etch through the remaining portion of the second layer using a selective etchant. The etch rate of the selective etchant through the second material is faster than an etch rate of the selective etchant through the first material, so that the second etching operation etches through the remaining portion of the second layer and stops at the first layer.

US Patent:

6800212, Oct 5, 2004

Filed:

May 15, 2002

Appl. No.:

10/146278

Inventors:

Jeffrey J. Peterson - Folsom CA
Charles E. Hunt - Davis CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

B29D 1100

US Classification:

216 24

Abstract:

One embodiment of the present invention provides a system to facilitate using selective etching to form optical components on a circuit device. The system operates by receiving a substrate composed of a first material including a buffer layer composed of a second material. The system forms a sacrificial layer composed of a third material on the buffer layer. Next, the system forms an optical fiber core composed of a fourth material on the sacrificial layer. After the optical fiber core has been formed, the system performs an etching operation using a selective etchant to remove the sacrificial layer. The system also applies a cladding layer to the optical fiber core.

US Patent:

6818137, Nov 16, 2004

Filed:

May 15, 2002

Appl. No.:

10/146279

Inventors:

Jeffrey J. Peterson - Folsom CA
Charles E. Hunt - Davis CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

C23F 100

US Classification:

216 2, 216 11

Abstract:

One embodiment of the present invention provides a system that facilitates construction of electromagnetic, optical, chemical, and mechanical systems using chemical endpoint detection. The system operates by receiving a system description that specifies multiple components, including a first component and a second component. The system fabricates the first component and the second component using selected construction materials. The system also creates a first interconnection structure on the first component and a second interconnection structure on the second component. These interconnection structures can be created using a sacrificial layer and chemical endpoint detection. Next, the system brings the first component and the second component together by connecting the first interconnection structure and the second interconnection structure. These interconnection structures align the first component to the second component so that accurate alignment can be achieved.

US Patent:

6884640, Apr 26, 2005

Filed:

May 13, 2003

Appl. No.:

10/437878

Inventors:

Jeffrey J. Peterson - Austin TX, US
Charles E. Hunt - Davis CA, US
Peter J. Bjeletich - Davis CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L021/66

US Classification:

438 14, 438 12, 438 16, 438 17, 438 18

Abstract:

One embodiment of the present invention provides a system that determines the composition of a layer within an integrated device. The system operates by first receiving the integrated device. Next, the system measures properties of the layer using electromagnetic radiation. The properties of the layer measured are used to determine an index of refraction for the layer. The system then solves for the composition of the layer using the index of refraction.

US Patent:

6972245, Dec 6, 2005

Filed:

May 15, 2003

Appl. No.:

10/439748

Inventors:

Jeffrey J. Peterson - Austin TX, US
Charles E. Hunt - Davis CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L021/20

US Classification:

438478, 438933, 438938

Abstract:

One embodiment of the present invention provides a system for co-fabricating strained and relaxed crystalline, poly-crystalline, and amorphous structures in an integrated circuit device using common fabrication steps. The system operates by first receiving a substrate. The system then fabricates multiple layers on this substrate. A layer within these multiple layers includes both strained structures and relaxed structures. These strained structures and relaxed structures are fabricated simultaneously using common fabrication steps.