Charles R Merritt

US Patent:

20120269221, Oct 25, 2012

Filed:

Mar 16, 2012

Appl. No.:

13/422309

Inventors:

Igor Vurgaftman - Odenton MD, US
Jerry R. Meyer - Catonsville MD, US
Chadwick Lawrence Canedy - Washington DC, US
William W. Bewley - Falls Church VA, US
ChulSoo Kim - Springfield VA, US
Mijin Kim - Springfield VA, US
Charles D. Merritt - Fairfax VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

H01S 5/34

US Classification:

372 4501

Abstract:

Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jneeded to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-10range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.