Charles S Rhoades

US Patent:

6454367, Sep 24, 2002

Filed:

Jan 2, 2001

Appl. No.:

09/446432

Inventors:

Charles Stephen Rhoades - Diablo CA

Assignee:

Trikon Equipments Limited - Newport

International Classification:

B65G 104

US Classification:

312198

Abstract:

Radial cluster tools, for example, include a central load/unload station and processing chambers for processing workpieces, such as semiconductor wafers. The processing chambers are arranged about the central load/unload station in abutting pairs to leave substantial maintenance spaces.

US Patent:

53840097, Jan 24, 1995

Filed:

Jun 16, 1993

Appl. No.:

8/078131

Inventors:

Steven Mak - Pleasanton CA
Brian Shieh - Fremont CA
Charles S. Rhoades - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

156662

Abstract:

A process for selectively etching a substrate, having grain boundaries and a resist material thereon, is described. The substrate is placed into an etch zone and a process gas comprising a primary etchant, a secondary etchant, and xenon is introduced into the etch zone. A plasma is generated in the zone to form an etch gas from the process gas, that substantially anisotropically etches the substrate at fast rates, with good selectivity, and reduced profile microloading. Preferably the primary etchant comprises Cl. sub. 2, and the secondary etchant comprises BCl. sub. 3.

US Patent:

55452892, Aug 13, 1996

Filed:

Jun 29, 1994

Appl. No.:

8/268377

Inventors:

Jian Chen - Santa Clara CA
James S. Papanu - San Rafael CA
Carmel Ish-Shalom - Kiriat Motzkin, IL
Peter Hsieh - Sunnyvale CA
Wesley G. Lau - San Jose CA
Charles S. Rhoades - Simi Valley CA
Brian Shieh - Hualien, TW
Ian S. Latchford - Sunnyvale CA
Karen A. Williams - Santa Clara CA
Victoria Yu-Wang - Los Altos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

1566431

Abstract:

A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is placed into a vacuum chamber (52), and passivated in a multicycle passivation process comprising at least two passivating steps. In each passivating step, passivating gas is introduced into the vacuum chamber (52) and a plasma is generated from the passivating gas. When the substrate also has remnant resist (26) thereon, the resist (26) is stripped in a multicycle passivation and stripping process, each cycle including a passivating step and a stripping step. The stripping step is performed by introducing a stripping gas into the vacuum chamber (52) and generating a plasma from the stripping gas. In the multicycle process, the passivating and optional stripping steps, are repeated at least once in the same order that the steps were done. Alternatively, the substrate (20) can also be passivated in a single cycle process using a passivating gas comprising water vapor, oxygen, and nitrogen.