Charles S Rhoades

US Patent:

6454367, Sep 24, 2002

Filed:

Jan 2, 2001

Appl. No.:

09/446432

Inventors:

Charles Stephen Rhoades - Diablo CA

Assignee:

Trikon Equipments Limited - Newport

International Classification:

B65G 104

US Classification:

312198

Abstract:

Radial cluster tools, for example, include a central load/unload station and processing chambers for processing workpieces, such as semiconductor wafers. The processing chambers are arranged about the central load/unload station in abutting pairs to leave substantial maintenance spaces.

US Patent:

53840097, Jan 24, 1995

Filed:

Jun 16, 1993

Appl. No.:

8/078131

Inventors:

Steven Mak - Pleasanton CA
Brian Shieh - Fremont CA
Charles S. Rhoades - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

156662

Abstract:

A process for selectively etching a substrate, having grain boundaries and a resist material thereon, is described. The substrate is placed into an etch zone and a process gas comprising a primary etchant, a secondary etchant, and xenon is introduced into the etch zone. A plasma is generated in the zone to form an etch gas from the process gas, that substantially anisotropically etches the substrate at fast rates, with good selectivity, and reduced profile microloading. Preferably the primary etchant comprises Cl. sub. 2, and the secondary etchant comprises BCl. sub. 3.

US Patent:

55452892, Aug 13, 1996

Filed:

Jun 29, 1994

Appl. No.:

8/268377

Inventors:

Jian Chen - Santa Clara CA
James S. Papanu - San Rafael CA
Carmel Ish-Shalom - Kiriat Motzkin, IL
Peter Hsieh - Sunnyvale CA
Wesley G. Lau - San Jose CA
Charles S. Rhoades - Simi Valley CA
Brian Shieh - Hualien, TW
Ian S. Latchford - Sunnyvale CA
Karen A. Williams - Santa Clara CA
Victoria Yu-Wang - Los Altos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

1566431

Abstract:

A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is placed into a vacuum chamber (52), and passivated in a multicycle passivation process comprising at least two passivating steps. In each passivating step, passivating gas is introduced into the vacuum chamber (52) and a plasma is generated from the passivating gas. When the substrate also has remnant resist (26) thereon, the resist (26) is stripped in a multicycle passivation and stripping process, each cycle including a passivating step and a stripping step. The stripping step is performed by introducing a stripping gas into the vacuum chamber (52) and generating a plasma from the stripping gas. In the multicycle process, the passivating and optional stripping steps, are repeated at least once in the same order that the steps were done. Alternatively, the substrate (20) can also be passivated in a single cycle process using a passivating gas comprising water vapor, oxygen, and nitrogen.

US Patent:

54239184, Jun 13, 1995

Filed:

Sep 21, 1993

Appl. No.:

8/124900

Inventors:

Anand Gupta - San Jose CA
Charles S. Rhoades - Los Gatos CA
Yan Ye - Campbell CA
Joseph Lanucha - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 600

US Classification:

134 1

Abstract:

A technique for removing particles from above a semiconductor wafer, particularly particles that are trapped in a plasma chamber during processing of the wafer. Trapped particles are usually not all drawn out with gases exhausted from the chamber, in part because a peripheral focus ring and clamping mechanism impede their flow. In the method of the invention, the focus ring and clamping mechanism are raised on completion of processing, but before radio-frequency (rf) power is disconnected from the process chamber. Trapped particles are then easily flowed from the chamber with an introduced inert gas, and the level of particulate contamination of the wafer is significantly reduced.

US Patent:

56859163, Nov 11, 1997

Filed:

Jul 7, 1995

Appl. No.:

8/499157

Inventors:

Yan Ye - Campbell CA
Charles Steven Rhoades - Los Gatos CA
Gerald Z. Yin - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 700

US Classification:

134 11

Abstract:

In accordance with the present invention, the plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber. When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be loacted upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.

US Patent:

52214249, Jun 22, 1993

Filed:

Nov 21, 1991

Appl. No.:

7/796096

Inventors:

Charles S. Rhoades - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

156643

Abstract:

A process is described for removing from an integrated circuit structure photoresist remaining after a metal etch which also removes or inactivates a sufficient amount of any remaining chlorine residues remaining from the previous metal etch to inhibit corrosion of the remaining metal for at least 24 hours. The process includes a first stripping step associated with a plasma, using either O. sub. 2 gas and one or more fluorocarbon gases, or O. sub. 2 gas and N. sub. 2 gas; followed by a subsequent step using a combination of H. sub. 2 O. sub. 2 /H. sub. 2 O vapors, O. sub. 2 gas, and optionally N. sub. 2 gas associated with a plasma. Preferably, the plasma is generated in a microwave plasma generator located upstream of the stripping chamber, and the stripping gases pass through this generator so that reactive species produced from the gases in the plasma enter the stripping chamber.

US Patent:

54862353, Jan 23, 1996

Filed:

Aug 9, 1993

Appl. No.:

8/104318

Inventors:

Yan Ye - Campbell CA
Charles S. Rhoades - Los Gatos CA
Gerald Z. Yin - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 700

US Classification:

134 11

Abstract:

The plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber. When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be located upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.

US Patent:

53875567, Feb 7, 1995

Filed:

Feb 24, 1993

Appl. No.:

8/021831

Inventors:

Diana M. Xiaobing - San Jose CA
Charles S. Rhoades - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21283

US Classification:

437228

Abstract:

A process for etching aluminum from a substrate, where portions of the aluminum are protected by a resist material, is described. The substrate is placed into a chamber and a process gas comprising HCl, Cl-containing etchant and N. sub. 2 is introduced in the chamber. A plasma is generated in the chamber to generate from the process gas an etch gas that etches aluminum from the substrate at fast rates, with good selectivity, reduced profile microloading, and substantially only anisotropic etching.