Chen Zhang

US Patent:

20200365469, Nov 19, 2020

Filed:

Aug 3, 2020

Appl. No.:

16/983587

Inventors:

- Armonk NY, US
Takashi Ando - Tuckahoe NY, US
Oleg Gluschenkov - Tannersville NY, US
Chen Zhang - Guilderland NY, US
Koji Watanabe - Rensselaer NY, US

International Classification:

H01L 21/8238
H01L 29/49
H01L 29/786
H01L 27/092
H01L 21/265
H01L 21/762
H01L 21/324
H01L 21/308

Abstract:

A method of forming a semiconductor structure includes forming one or more vertical fins each including a first semiconductor layer providing a vertical transport channel for a lower vertical transport field-effect transistor (VTFET) of a stacked VTFET structure, an isolation layer over the first semiconductor layer, and a second semiconductor layer over the isolation layer providing a vertical transport channel for an upper VTFET of the stacked VTFET structure. The method also includes forming a first gate stack including a first gate dielectric layer and a first gate conductor layer surrounding a portion of the first semiconductor layer of the vertical fins. The method further includes forming a second gate stack including a second gate dielectric layer and a second gate conductor layer surrounding a portion of the second semiconductor layer of the vertical fins. The first gate conductor layer and the second gate conductor layer are the same material.

US Patent:

20200328127, Oct 15, 2020

Filed:

Apr 15, 2019

Appl. No.:

16/384545

Inventors:

- Armonk NY, US
Takashi Ando - Tuckahoe NY, US
Oleg Gluschenkov - Tannersville NY, US
Chen Zhang - Guilderland NY, US
Koji Watanabe - Rensselaer NY, US

International Classification:

H01L 21/8238
H01L 21/324
H01L 21/308
H01L 21/762
H01L 21/265
H01L 27/092
H01L 29/786
H01L 29/49

Abstract:

A method of forming a semiconductor structure includes forming one or more vertical fins each including a first semiconductor layer providing a vertical transport channel for a lower vertical transport field-effect transistor (VTFET) of a stacked VTFET structure, an isolation layer over the first semiconductor layer, and a second semiconductor layer over the isolation layer providing a vertical transport channel for an upper VTFET of the stacked VTFET structure. The method also includes forming a first gate stack including a first gate dielectric layer and a first gate conductor layer surrounding a portion of the first semiconductor layer of the vertical fins. The method further includes forming a second gate stack including a second gate dielectric layer and a second gate conductor layer surrounding a portion of the second semiconductor layer of the vertical fins. The first gate conductor layer and the second gate conductor layer are the same material.

US Patent:

20190344763, Nov 14, 2019

Filed:

May 14, 2018

Appl. No.:

15/979137

Inventors:

- Dearborn MI, US
Theresa Lin - Berkeley CA, US
Chen Zhang - S Rockwood MI, US

International Classification:

B60T 8/172
B60D 1/36
B60W 10/184
B60W 10/04
B60W 30/18

Abstract:

Certain driver-assist features of a vehicle require incredibly precise longitudinal control of the vehicle. Achieving the precise control requires up-to-date knowledge of performance parameters of a brake system of the vehicle, which may vary extensively based on a wide set of influences outside the control of the brake system. The present disclosure proposes techniques to determine these parameters, for example, by stopping the vehicle early in maneuvering in order to study the brake performance, so that precise longitudinal control of the vehicle may be realized.

US Patent:

20170068655, Mar 9, 2017

Filed:

Oct 29, 2015

Appl. No.:

14/927274

Inventors:

- Mountain View CA, US
Eric GLOVER - Palo Alto CA, US
Chen ZHANG - Mountain View CA, US
Zhaohui CHEN - Saratoga CA, US
Xueying DAI - Santa Clara CA, US

International Classification:

G06F 17/27
G06F 17/30
G06F 17/28
G06F 17/22

Abstract:

A computerized system for transforming an input string includes a dictionary with tokens and associated scores. A chart parser generates a chart parse of the input string by, for each position within the input string, (i) identifying a string of at least one consecutive character in the input string that begins at that position and matches one of the tokens and (ii) unless the identified string is a single character matching the start character for another entry in the chart parse, creating an entry corresponding to the identified string. A partition selection module determines a selected partition of the input string. The selected partition includes an array of tokens selected from the chart parse such that their concatenation matches the input string. The selected partition is a minimum score partition, where the score is based on a sum of the tokens' associated scores from the dictionary.