Chen C Zhang

US Patent:

20130329876, Dec 12, 2013

Filed:

Jun 8, 2012

Appl. No.:

13/491666

Inventors:

Nancy Ellen Kho - Belmont MA, US
Chen Zhang - Waltham MA, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H04M 1/56

US Classification:

37914204

Abstract:

Described are a system and method for processing content in a unified communications environment. As part of an electronic communication session between a first party electronic device and at least one second party electronic device, an identifier is received from the first party electronic device at the at least one second party electronic device. A search is performed for collaborative history data at the second party electronic device using the identifier. Data related to the electronic communication session and/or the collaborative history data is presented at the second party electronic device.

US Patent:

20130332536, Dec 12, 2013

Filed:

May 3, 2013

Appl. No.:

13/886443

Inventors:

International Business Machines Corporation - , US
Chen Zhang - Waltham MA, US

Assignee:

International Business Machines Corporation - Armonk MA

International Classification:

H04L 29/06

US Classification:

709205

Abstract:

Described are a system and method for processing content in a unified communications environment. As part of an electronic communication session between a first party electronic device and at least one second party electronic device, an identifier is received from the first party electronic device at the at least one second party electronic device. A search is performed for collaborative history data at the second party electronic device using the identifier. Data related to the electronic communication session and/or the collaborative history data is presented at the second party electronic device.

US Patent:

20210273077, Sep 2, 2021

Filed:

Feb 28, 2020

Appl. No.:

16/805346

Inventors:

- Armonk NY, US
Chun-Chen Yeh - Danbury CT, US
Alexander Reznicek - Troy NY, US
Chen Zhang - Albany NY, US

International Classification:

H01L 29/66
H01L 21/8238
H01L 29/78
H01L 29/16
H01L 29/08
H01L 29/417

Abstract:

A semiconductor structure, and a method for forming the same includes an amorphous semiconductor layer in contact with a top surface of a channel fin extending vertically from a bottom source/drain located above a substrate. A hard mask memorization layer is formed directly above the amorphous semiconductor layer, portions of the amorphous semiconductor layer in contact with the top surface of the channel fin are recrystallized forming recrystallized regions. The amorphous semiconductor layer is selective removed and a second dielectric layer is deposited to form a top spacer. The hard mask memorization layer and the recrystallized regions are removed, and a first epitaxial region is formed above the channel fin followed by a second epitaxial region positioned above the first epitaxial region and between the second dielectric layer forming a top source/drain of the semiconductor structure.