Chen Y Zhang

US Patent:

7048992, May 23, 2006

Filed:

Jan 20, 2004

Appl. No.:

10/760875

Inventors:

Chen Zhang - Clarksville MD, US
John King - Ellicott City MD, US
Luna Chiu - Ellicott City MD, US

Assignee:

Paratek Microwave, Inc. - Columbia MD

International Classification:

B32B 3/00
H01P 5/00
H01P 1/18

US Classification:

428209, 333 1, 333161, 257662

Abstract:

A tunable dielectric chip, and method of manufacture therefore, that comprises a dielectric substrate, the dielectric substrate patterned to a critical dimension, a metallized portion integral to the dielectric substrate, and an encapsulant covering an any portion of the dielectric substrate not covered by the metallized portion. A thin titanium layer can be deposited in between the metallized portion and the dielectric substrate to promote adhesion. The dielectric substrate can be a dielectric thick film. The thickness of the titanium can vary from 200A to 500A and the metallized portion integral to the dielectric substrate in a preferred embodiment is gold and varies in thickness from 3 um to several microns depending on the application. Further, in the present preferred embodiment, the encapsulant is a photo-definable encapsulant. The present invention also provides solder pads integral to the metallized portion enabling maximan protection from moisture and other contaminants.

US Patent:

8283108, Oct 9, 2012

Filed:

Mar 19, 2007

Appl. No.:

11/725313

Inventors:

Luna H. Chiu - Ellicott City MD, US
Chen Zhang - Clarksville MD, US
John King - Ellicott City MD, US
Barry Treadway - Gaithersburg MD, US
George Kang - Newark DE, US

Assignee:

Research in Motion RF, Inc. - Wilmington DE

International Classification:

H01P 3/02

US Classification:

430311, 430313, 430198, 333206

Abstract:

An embodiment of the present invention provides a method of applying patterned metallization to a ceramic block comprising applying a photodefinable ink to said ceramic block; drying said ink; exposing said photodefinable ink to UV radiation through a predefined mask according to the thickness of the film to form a pattern; developing said pattern in a developer solution thereby forming a patterned ceramic block; and rinsing, drying and firing said patterned ceramic block.

US Patent:

8535875, Sep 17, 2013

Filed:

Sep 13, 2012

Appl. No.:

13/613022

Inventors:

Luna H. Chiu - Ellicott City MD, US
Chen Zhang - Clarksville MD, US
John King - Ellicott City MD, US
Barry Treadway - Gaithersburg MD, US
George Kang - Newark DE, US

Assignee:

Blackberry Limited - Waterloo, Ontario

International Classification:

H01P 3/02

US Classification:

430325, 430198, 430330, 333206

Abstract:

An embodiment of the present invention provides a method of applying patterned metallization to a ceramic block comprising applying a photodefinable ink to said ceramic block; drying said ink; exposing said photodefinable ink to UV radiation through a predefined mask according to the thickness of the film to form a pattern; developing said pattern in a developer solution thereby forming a patterned ceramic block; and rinsing, drying and firing said patterned ceramic block.

US Patent:

20040227592, Nov 18, 2004

Filed:

Dec 15, 2003

Appl. No.:

10/736467

Inventors:

Luna Chiu - Ellicott City MD, US
Chen Zhang - Clarksville MD, US
John King - Ellicott City MD, US
Barry Treadway - Gaithersburg MD, US
George Kang - Newark DE, US

International Classification:

H01P001/20

US Classification:

333/202000

Abstract:

An electric communication signal block resonator, comprising a block of dielectric materials having an outside surface including a top surface, a bottom surface, and at least first and second side surfaces. The block defines at least one through-hole and each through-hole extends from an opening in the bottom surface to an opening in the top surface. Further, a metallization is deposited via a photodefinable process onto said block. The metallization includes input/output coupling metallization deposited via a photodefinable process as well as metallization of tunable varactors deposited via a photodefinable process. Also, the present invention is a method of applying patterned metallization to a ceramic block comprising the steps of: applying a photodefinable ink to said ceramic block; drying said ink; exposing said photodefinable ink to UV radiation through a predefined mask according to the thickness of the film to form a pattern; developing said pattern in a developer solution thereby forming a patterned ceramic block; and rinsing, drying and firing said patterned ceramic block.

US Patent:

20040229025, Nov 18, 2004

Filed:

Apr 12, 2004

Appl. No.:

10/822326

Inventors:

Chen Zhang - Clarksville MD, US
Xiachong Tang - Columbia MD, US
Luna Chiu - Ellicott City MD, US

International Classification:

B05D003/12
B32B007/00

US Classification:

428/209000, 427/558000, 427/430100, 427/240000

Abstract:

This invention provides a method of fabricating a tunable dielectric slurry, comprising, depositing a thick film tunable dielectric onto a substrate, subjecting the thick film to UV radiation exposure after it is coated onto the substrate, drying and baking the thick film and the substrate, applying a developer to the thick film and the substrate, the developer capable of washing away an unexposed area of the thick film and retaining an exposed area enabling a latent pattern to be brought out and thus creating a patterned film, and sintering the substrate.

US Patent:

20060189039, Aug 24, 2006

Filed:

Mar 16, 2006

Appl. No.:

11/377722

Inventors:

Chen Zhang - Clarksville MD, US
John King - Ellicott city MD, US
Luna Chiu - Ellicott city MD, US

International Classification:

H01L 21/50
B32B 3/00

US Classification:

438125000, 428209000

Abstract:

An embodiment of the present invention provides a method, comprising fabricating a tunable dielectric chip by defining a critical area on a dielectric material via patterning and metallization and encapsulating said critical area.

US Patent:

20140022031, Jan 23, 2014

Filed:

Aug 15, 2013

Appl. No.:

13/967724

Inventors:

- Waterloo, CA
Chen Zhang - Clarksville MD, US
John King - Ellicott City MD, US
Barry Treadway - Gaithersburg MD, US
George Kang - Newark DE, US

Assignee:

BLACKBERRY LIMITED - Waterloo

International Classification:

G03F 7/40
H01P 1/20

US Classification:

333202, 430311, 430198, 428138

Abstract:

An embodiment of the present invention provides a method of applying patterned metallization to a ceramic block comprising applying a photodefinable ink to said ceramic block; drying said ink; exposing said photodefinable ink to UV radiation through a predefined mask according to the thickness of the film to form a pattern; developing said pattern in a developer solution thereby forming a patterned ceramic block; and rinsing, drying and firing said patterned ceramic block.

US Patent:

20200365469, Nov 19, 2020

Filed:

Aug 3, 2020

Appl. No.:

16/983587

Inventors:

- Armonk NY, US
Takashi Ando - Tuckahoe NY, US
Oleg Gluschenkov - Tannersville NY, US
Chen Zhang - Guilderland NY, US
Koji Watanabe - Rensselaer NY, US

International Classification:

H01L 21/8238
H01L 29/49
H01L 29/786
H01L 27/092
H01L 21/265
H01L 21/762
H01L 21/324
H01L 21/308

Abstract:

A method of forming a semiconductor structure includes forming one or more vertical fins each including a first semiconductor layer providing a vertical transport channel for a lower vertical transport field-effect transistor (VTFET) of a stacked VTFET structure, an isolation layer over the first semiconductor layer, and a second semiconductor layer over the isolation layer providing a vertical transport channel for an upper VTFET of the stacked VTFET structure. The method also includes forming a first gate stack including a first gate dielectric layer and a first gate conductor layer surrounding a portion of the first semiconductor layer of the vertical fins. The method further includes forming a second gate stack including a second gate dielectric layer and a second gate conductor layer surrounding a portion of the second semiconductor layer of the vertical fins. The first gate conductor layer and the second gate conductor layer are the same material.