Cheng Wu

US Patent:

20120136646, May 31, 2012

Filed:

Nov 30, 2010

Appl. No.:

12/956739

Inventors:

Carl J. Kraenzel - Boston MA, US
David M. Lubensky - Brookfield CT, US
Baiju Dhirajlal Mandalia - Boca Raton FL, US
Cheng Wu - Mount Kisco NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

G06F 17/28

US Classification:

704 2

Abstract:

A method, computer system, and computer program product for translating information. The computer system receives the information for a translation. The computer system identifies portions of the information based on a set of rules for security for the information in response to receiving the information. The computer system sends the portions of the information to a plurality of translation systems. In response to receiving translation results from the plurality of translation systems for respective portions of the information, the computer system combines the translation results for the respective portions to form a consolidated translation of the information.

US Patent:

20150214056, Jul 30, 2015

Filed:

Dec 31, 2013

Appl. No.:

14/145674

Inventors:

- Marlborough MA, US
Cheng Han WU - Marlborough MA, US
Dong Won CHUNG - Gyeonggi-Do, KR
Yoshihiro YAMAMOTO - Niigata-Shi, JP
George G. BARCLAY - Chaska MN, US
Gerhard POHLERS - Needham MA, US

International Classification:

H01L 21/266
H01L 21/02
H01L 21/3105

Abstract:

Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; an acid generator chosen from thermal acid generators, photoacid generators and combinations thereof; and a solvent; (d) exposing the coated semiconductor substrate to conditions to generate an acid in the descumming composition from the acid generator; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

US Patent:

20140187027, Jul 3, 2014

Filed:

Dec 31, 2013

Appl. No.:

14/145726

Inventors:

- Marlborough MA, US
Cheng Han WU - Marlborough MA, US
Dong Won CHUNG - Gyeonggi-do, KR
Yoshihiro YAMAMOTO - Niigata-Shi, JP

International Classification:

H01L 21/266

US Classification:

438530

Abstract:

Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.