Chi Z Lu

US Patent:

20220359224, Nov 10, 2022

Filed:

May 4, 2021

Appl. No.:

17/307383

Inventors:

- Santa Clara CA, US
Chi LU - Cupertino CA, US
He REN - San Jose CA, US
Mehul NAIK - San Jose CA, US

International Classification:

H01L 21/3213
H01L 21/033
H01L 21/67
H01J 37/32

Abstract:

Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of Oor chloride (Cl) while supplying nitrogen (N) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.

US Patent:

20230045689, Feb 9, 2023

Filed:

Oct 18, 2022

Appl. No.:

17/968201

Inventors:

- Santa Clara CA, US
Chi Lu - Sunnyvale CA, US
He Ren - San Jose CA, US
Chi-I Lang - Cupertino CA, US
Ho-yung David Hwang - Cupertino CA, US
Mehul Naik - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/768
H01L 21/3213
H01L 21/306
H01L 21/027

Abstract:

A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

US Patent:

20210125864, Apr 29, 2021

Filed:

Oct 24, 2019

Appl. No.:

16/662200

Inventors:

- Santa Clara CA, US
Chi Lu - Sunnyvale CA, US
He Ren - San Jose CA, US
Chi-I Lang - Cupertino CA, US
Ho-yung David Hwang - Cupertino CA, US
Mehul Naik - San Jose CA, US

International Classification:

H01L 21/768
H01L 21/027
H01L 21/203
H01L 21/306
H01L 21/3213

Abstract:

A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

US Patent:

20180358229, Dec 13, 2018

Filed:

Jun 7, 2018

Appl. No.:

16/002218

Inventors:

- Santa Clara CA, US
Eswaranand Venkatasubramanian - Santa Clara CA, US
Pramit Manna - Sunnyvale CA, US
Chi Lu - Sunnyvale CA, US
Chi-I Lang - Cupertino CA, US
Nancy Fung - Livermore CA, US
Abhijit Basu Mallick - Palo Alto CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/308
H01L 21/311
H01L 21/02

Abstract:

A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sphybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.

US Patent:

20160099740, Apr 7, 2016

Filed:

Aug 26, 2015

Appl. No.:

14/835731

Inventors:

- Taoyuan City, TW
Maxence Sylvain Marie Joseph Derreumaux - San Francisco CA, US
Chi Jen Lu - San Francisco CA, US

International Classification:

H04B 1/3888
H05K 5/00
H05K 5/02
G06F 1/16

Abstract:

A casing applicable to a portable electronic device includes a supporter and a casing body having a back surface and side surfaces connecting to the back surface. The back surface has a camera opening for exposing a camera shutter of the portable electronic device and a supporter opening having a bevel side not parallel to the side surfaces. The supporter connected to the bevel side includes first and second sides which define a vertex angle. The supporter is adapted to rotate between a covering position and a supporting position. When at the covering position, the supporter covers the supporter opening, and the vertex angle and the camera opening are arranged diagonally. When the supporter is at the supporting position, the casing is supported by the vertex angle and one of the side surfaces away from the camera opening for the portable electronic device to perform landscape or portrait display.

US Patent:

20160012701, Jan 14, 2016

Filed:

Jul 8, 2014

Appl. No.:

14/326148

Inventors:

Chi Lu - San Francisco CA, US

International Classification:

G08B 21/18
A62C 13/00
F41H 13/00
F41H 9/10

Abstract:

A unitary sleeve configured to encompass at least a portion of a dispenser device and convert the substance dispenser into a “smart” dispenser. An actuator is coupled to the dispenser device and actuated in response to mechanical release of a substance from the dispenser device. A transmitter module is coupled to the actuator and operable to transmit an activation signal to a remote device in response to actuation of the actuator. The remote device communicatively coupled to the transmitter module of the unitary sleeve comprises the “smart” substance dispenser system.