Chia Chuan Chang

US Patent:

20140070732, Mar 13, 2014

Filed:

Sep 11, 2013

Appl. No.:

14/024548

Inventors:

Chia Ming Chang - Eatontown NJ, US

International Classification:

H01S 3/09

US Classification:

315500

Abstract:

A laser-driven dielectric electron accelerator is composed of a dielectric photonic crystal accelerator structure having an electron beam channel and buried grating whose elements are arranged linearly parallel to the electron beam channel. The accelerator structure preferably has a thin film material coating. The grating may have an asymmetric structure. The accelerator and undulator structures may be integrated with on-chip optical and electronic devices such as waveguide devices and control circuits so that multiple devices can be fabricated on the same chip.

US Patent:

59763310, Nov 2, 1999

Filed:

Apr 30, 1998

Appl. No.:

9/070387

Inventors:

Chia C. Chang - Berkeley Heights NJ
Robert E. Frahm - Flemington NJ
Orval G. Lorimor - Warren NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

C25D 1706

US Classification:

204224R

Abstract:

An apparatus may be used to deposit metal or conductive layers upon semiconductor wafers using an electrochemical process. The apparatus comprises a housing for retaining a first electrode (e. g. , anode) and a second electrode (e. g. , cathode), in a fixed spaced-apart relation to each other, with the surface area of the anode exceeding the surface area of the cathode (the wafer). The back surface of the wafer is mounted on a handling disk; the disk has an aperture for accessing the wafer and is held in the housing. A contact probe passes through the aperture to touch the back surface of the wafer, the probe having a spring-loaded spherical radius head for depressurizing the head as it touches the wafer. This apparatus permits a uniform current distribution as the contact probe is not interposed between the electrodes, and the larger surface area of the anode relative to the wafer enhances the production of uniform and reproducible films. The housing may be comprised of at least two separable parts so that access may be readily gained to the inner cavity of the housing, thus enhancing the ease with which the device may be used.

US Patent:

63266490, Dec 4, 2001

Filed:

Jan 13, 1999

Appl. No.:

9/229426

Inventors:

Chia C. Chang - Berkeley Heights NJ
Robert Eugene Frahm - Flemington NJ
Keon M. Lee - Bellemead NJ
Orval George Lorimor - Wolfeboro NH
Dennis Ronald Zolnowski - Bridgewater NJ

Assignee:

Agere Systems, Inc. - Miami Lakes FL

International Classification:

H01L 31072
H01L 31109
H01L 310328
H01L 310336

US Classification:

257184

Abstract:

A PIN photodiode comprising a p region containing a p type dopant, an n region containing an n type dopant, an i region positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region positioned between the n region and the i region which substantially decreases the capacitance of the PIN photodiode such that the photodiode bandwidth is maximized. Typically, the buffer region is formed as a layer of indium phosphide that is at least approximately 0. 5. mu. m in thickness.