- Armonk NY, US Roger A. Quon - Rhinebeck NY, US Terry A. Spooner - Clifton Park NY, US Wei Wang - Yorktown Heights NY, US Chih -Chao Yang - Glenmont NY, US
A conductive interface includes a first conductor having a recessed area in least one surface. A dielectric layer has a trench positioned over the first conductor. A nitridized layer is formed on a top surface of the first conductor around the recessed area, to a depth on the first conductor that is shallower than a depth of the recessed area. A second conductor is formed in the trench and the recessed area to form a conductive contact with the first conductor.
- Armonk NY, US Roger A. Quon - Rhinebeck NY, US Terry A. Spooner - Clifton Park NY, US Wei Wang - Yorktown Heights NY, US Chih -Chao Yang - Glenmont NY, US
International Classification:
H01L 23/522 H01L 23/528 H01L 23/532
Abstract:
Conductive contacts include a first conductor disposed within a first dielectric layer, the first conductor having a recessed area in least one surface. A second dielectric layer is formed over the first dielectric layer, comprising a trench positioned over the first conductor. A second conductor is formed in the trench and the recessed area to form a conductive contact with the first conductor.
- Armonk NY, US Roger A. Quon - Rhinebeck NY, US Terry A. Spooner - Clifton Park NY, US Wei Wang - Yorktown Heights NY, US Chih -Chao Yang - Glenmont NY, US
International Classification:
H01L 23/522 H01L 23/532 H01L 23/528
Abstract:
Methods of forming vias include nitridizing exposed surfaces of a first layer and an exposed surface of a conductor underlying the first layer to form a layer of nitridation at said exposed surfaces. Material from the layer of nitridation at the exposed surface of the underlying conductor is etched away. The exposed surface of the underlying conductor is etched away to form a recessed area in the underlying conductor after etching away material from the layer of nitridation. A conductive via that forms a conductive contact with the underlying conductor is formed.