Chih Chao Yang

US Patent:

20180315703, Nov 1, 2018

Filed:

Jun 21, 2018

Appl. No.:

16/014362

Inventors:

- Armonk NY, US
Roger A. Quon - Rhinebeck NY, US
Terry A. Spooner - Clifton Park NY, US
Wei Wang - Yorktown Heights NY, US
Chih -Chao Yang - Glenmont NY, US

International Classification:

H01L 23/522
H01L 21/768
H01L 23/532
H01L 23/528
H01L 21/311

Abstract:

A conductive interface includes a first conductor having a recessed area in least one surface. A dielectric layer has a trench positioned over the first conductor. A nitridized layer is formed on a top surface of the first conductor around the recessed area, to a depth on the first conductor that is shallower than a depth of the recessed area. A second conductor is formed in the trench and the recessed area to form a conductive contact with the first conductor.

US Patent:

20180082945, Mar 22, 2018

Filed:

Feb 28, 2017

Appl. No.:

15/444933

Inventors:

- Armonk NY, US
Roger A. Quon - Rhinebeck NY, US
Terry A. Spooner - Clifton Park NY, US
Wei Wang - Yorktown Heights NY, US
Chih -Chao Yang - Glenmont NY, US

International Classification:

H01L 23/522
H01L 23/528
H01L 23/532

Abstract:

Conductive contacts include a first conductor disposed within a first dielectric layer, the first conductor having a recessed area in least one surface. A second dielectric layer is formed over the first dielectric layer, comprising a trench positioned over the first conductor. A second conductor is formed in the trench and the recessed area to form a conductive contact with the first conductor.

US Patent:

20180082946, Mar 22, 2018

Filed:

Oct 30, 2017

Appl. No.:

15/797539

Inventors:

- Armonk NY, US
Roger A. Quon - Rhinebeck NY, US
Terry A. Spooner - Clifton Park NY, US
Wei Wang - Yorktown Heights NY, US
Chih -Chao Yang - Glenmont NY, US

International Classification:

H01L 23/522
H01L 23/532
H01L 23/528

Abstract:

Methods of forming vias include nitridizing exposed surfaces of a first layer and an exposed surface of a conductor underlying the first layer to form a layer of nitridation at said exposed surfaces. Material from the layer of nitridation at the exposed surface of the underlying conductor is etched away. The exposed surface of the underlying conductor is etched away to form a recessed area in the underlying conductor after etching away material from the layer of nitridation. A conductive via that forms a conductive contact with the underlying conductor is formed.