Ching L Wang

US Patent:

6435345, Aug 20, 2002

Filed:

Jul 20, 2001

Appl. No.:

09/909069

Inventors:

Ching Ling Wang - Walnut CA

Assignee:

King Power Enterprise, Inc. - Walnut CA

International Classification:

A63B 5500

US Classification:

2063157, 248 96

Abstract:

A golf bag is provided with a pair of legs hinged at a rigid collar at the upper extremity of the bag. The lower end of the bag is closed by a base member that defines a flat, planar sole perpendicular to the longitudinal orientation of the bag, and also an upwardly inclined heel. An actuation plate is attached by a leaf hinge connection to the base member at the transition between the sole and heel. Knuckles on the base member and actuation plate are interleaved with each other across the width of the base member. The actuation plate protrudes outwardly beyond the body portion of the bag a distance of at least one inch. A spring wire spreader rod has a central, bight portion that is captured by a spreader hinge bracket located at the upper, outboard edge of the actuation plate. The wire spreader rod is configured with segments oriented at obtuse and reflex angles to provide improved leverage in deploying the legs. The interleaved knuckle hinge connection prevents the actuation plate from binding relative to the base member.

US Patent:

6621115, Sep 16, 2003

Filed:

Nov 6, 2001

Appl. No.:

10/005495

Inventors:

Ching Dong Wang - Cupertino CA

Assignee:

Integrated Memory Technologies, Inc. - Santa Clara CA

International Classification:

H01L 2976

US Classification:

257314, 438267, 257317

Abstract:

A scalable flash EEPROM cell having a semiconductor substrate with a drain and a source and a channel therebetween. A select gate is positioned over a portion of the channel and is insulated therefrom. A floating gate is a spacer having a bottom surface positioned over a second portion of the channel and is insulated therefrom. The floating gate has two side surfaces extending from the bottom surface. A control gate is over the floating gate and includes a first portion that is adjacent the floating gate first side surface, and a second portion adjacent the floating gate second side surface.

US Patent:

6764905, Jul 20, 2004

Filed:

Jul 9, 2003

Appl. No.:

10/616358

Inventors:

Ching Dong Wang - Cupertino CA

Assignee:

Integrated Memory Technologies, Inc. - Santa Clara CA

International Classification:

H01L 21336

US Classification:

438267, 438266, 438257, 257315

Abstract:

A scalable flash EEPROM cell having a semiconductor substrate with a drain and a source and a channel therebetween. A select gate is positioned over a portion of the channel and is insulated therefrom. A floating gate is a spacer having a bottom surface positioned over a second portion of the channel and is insulated therefrom. The floating gate has two side surfaces extending from the bottom surface. A control gate is over the floating gate and includes a first portion that is adjacent the floating gate first side surface, and a second portion adjacent the floating gate second side surface.

US Patent:

46671072, May 19, 1987

Filed:

Jun 19, 1985

Appl. No.:

6/746496

Inventors:

Ching L. Wang - Livermore CA

Assignee:

The United States of America as represented by the United States
Department of Energy - Washington DC

International Classification:

G01T 300

US Classification:

250390

Abstract:

The invention comprises a neutron detector (50) of very high temporal resolution that is particularly well suited for measuring the fusion reaction neutrons produced by laser-driven inertial confinement fusion targets. The detector comprises a biased two-conductor traveling-wave transmission line (54, 56, 58, 68) having a uranium cathode (60) and a phosphor anode (62) as respective parts of the two conductors. A charge line and Auston switch assembly (70, 72, 74) launch an electric field pulse along the transmission line. Neutrons striking the uranium cathode at a location where the field pulse is passing, are enabled to strike the phosphor anode and produce light that is recorded on photographic film (64). The transmission line may be variously configured to achieve specific experimental goals.

US Patent:

44242204, Jan 3, 1984

Filed:

Sep 22, 1982

Appl. No.:

6/421595

Inventors:

Ching C. Wang - San Francisco CA

Assignee:

Merck & Co., Inc. - Rahway NJ

International Classification:

A61K 31495

US Classification:

424250

Abstract:

Fluorouracil and emimycin are useful in the treatment of giardiasis and trichomoniasis.

US Patent:

60750448, Jun 13, 2000

Filed:

Jul 17, 1998

Appl. No.:

9/118451

Inventors:

Ching C. Wang - San Francisco CA
John Somoza - San Francisco CA
Jon P. Page - San Francisco CA
Ronaldus Marcellus Alphonsus Knegtel - Nbijmegen, NL
Irwin D. Kuntz - Greenbrae CA
Connie M. Oshiro - Mountain View CA
A. Geoffrey Skillman - San Francisco CA

Assignee:

The Regents of the University of California - San Francisco CA

International Classification:

A01N 4338

US Classification:

514415

Abstract:

The use of certain heterocyclic derivatives for treating parasitic protozoa infections in mammals, in particular bovine trichomoniasis and giardiasis, is disclosed.

US Patent:

43935125, Jul 12, 1983

Filed:

Jul 7, 1981

Appl. No.:

6/281141

Inventors:

Ching L. Wang - Livermore CA

Assignee:

The United States of America as represented by the United States
Department of Energy - Washington DC

International Classification:

G01N 2322

US Classification:

378156

Abstract:

An apparatus utilizing filter-fluorescer combinations is provided to measure short bursts of high fluence x-rays above 120 keV energy, where there are no practical absorption edges available for conventional filter-fluorescer techniques. The absorption edge of the prefilter is chosen to be less than that of the fluorescer, i. e. , E. sub. PRF E. sub. F. In this way, the response function is virtually zero between E. sub. PRF and E. sub. F and well defined and enhanced in an energy band of less than 1000 keV above the 120 keV energy.

US Patent:

62321854, May 15, 2001

Filed:

May 15, 2000

Appl. No.:

9/570963

Inventors:

Ching D. Wang - Cupertino CA

Assignee:

Integrated Memory Technologies, Inc. - Santa Clara CA

International Classification:

H01L 21336

US Classification:

438266

Abstract:

A method for making a non-volatile memory cell having a select gate, a floating gate and a control gate of the completely self-aligned type, partially self-aligned type and non-aligned type is disclosed. Further, each of the three types of cells has a floating gate, whose linear dimension can be increased beyond the smallest lithographic feature of the process design rule.