Christine E Richardson

US Patent:

7557375, Jul 7, 2009

Filed:

Oct 26, 2004

Appl. No.:

10/974390

Inventors:

Christine E. Richardson - Pasadena CA, US
Harry A. Atwater - South Pasadena CA, US

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

H01L 29/00

US Classification:

257 65, 257 52, 257 75, 257E31043, 438166, 438486

Abstract:

The present invention provides methods of manufacturing of silicon in substantially crystalline form out of amorphous silicon.

US Patent:

7651768, Jan 26, 2010

Filed:

Aug 29, 2008

Appl. No.:

12/200996

Inventors:

Christine Richardson - Northborough MA, US
Weidong Huang - Acton MA, US
Richard Wallace - Acton MA, US
Daniel Doble - Brookline MA, US
Scott Reitsma - Shrewsbury MA, US

Assignee:

Evergreen Solar, Inc. - Marlborough MA

International Classification:

C23D 5/00

US Classification:

428367, 428408, 428702, 428698

Abstract:

A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees.

US Patent:

7727590, Jun 1, 2010

Filed:

May 17, 2007

Appl. No.:

11/798931

Inventors:

Christine Richardson - Northboro MA, US
Harry A. Atwater - South Pasadena CA, US

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

C23C 16/00

US Classification:

42724911, 118718

Abstract:

A hot wire chemical vapor deposition apparatus comprises a vacuum chamber, a substrate support member located in the vacuum chamber, a filament assembly support member located in the vacuum chamber, a precursor gas inlet located in the vacuum chamber and a device for providing a clean portion of at least one filament inside the vacuum chamber without breaking vacuum.

US Patent:

7842270, Nov 30, 2010

Filed:

Dec 9, 2009

Appl. No.:

12/633951

Inventors:

Christine Richardson - Northborough MA, US
Weidong Huang - Acton MA, US
Richard Wallace - Acton MA, US
Daniel Doble - Brookline MA, US
Scott Reitsma - Shrewsbury MA, US

Assignee:

Evergreen Solar, Inc. - Marlborough MA

International Classification:

C01B 33/02

US Classification:

423349, 423348

Abstract:

A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees.

US Patent:

8293007, Oct 23, 2012

Filed:

Jun 13, 2008

Appl. No.:

12/138791

Inventors:

Richard Wallace - Acton MA, US
David Harvey - Westford MA, US
Weidong Huang - Acton MA, US
Scott Reitsma - Shrewsbury MA, US
Christine Richardson - Northborough MA, US

Assignee:

Max Era, Inc. - Reno NV

International Classification:

C30B 11/00
C30B 15/00
C30B 21/06
C30B 27/02
C30B 28/10
C30B 30/04

US Classification:

117 13, 117 11, 117 23, 117 24

Abstract:

A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible.

US Patent:

20060108688, May 25, 2006

Filed:

Nov 16, 2005

Appl. No.:

11/274197

Inventors:

Christine Richardson - Pasadena CA, US
Harry Atwater - South Pasadena CA, US

International Classification:

H01L 23/48

US Classification:

257756000, 257750000, 257753000

Abstract:

A silicon structure includes a selective nucleating single phase epitaxial (SNSPE) template polysilicon layer containing crystallization catalyst residue, and a hot wire chemical vapor deposited (HWCVD) epitaxial polysilicon layer epitaxially grown on said template layer. The silicon structure may satisfy at least one of the following: 1) a thickness of the SNSPE template layer is less that about 60 nm; 2) a thickness of the HPCVD layer is greater than about 60 nm. The silicon structure may be used in a polysilicon solar cell or other solid state devices. A method of making a polysilicon layer includes providing a first layer comprising an amorphous silicon or a polysilicon layer containing a crystallization catalyst or in contact with a crystallization catalyst, and annealing the first layer in a silicon containing atmosphere to at least partially crystallize the first layer.

US Patent:

20090061224, Mar 5, 2009

Filed:

Aug 29, 2008

Appl. No.:

12/201180

Inventors:

Christine Richardson - Northborough MA, US
Lawrence Felton - Hopkinton MA, US

Assignee:

EVERGREEN SOLAR, INC. - Marlborough MA

International Classification:

B32B 18/00
B05D 3/02
B05D 1/00
B32B 1/00

US Classification:

428373, 4273722, 4273977, 428391, 428367

Abstract:

A method of making string for string ribbon crystal provides a substrate having an outer surface, and extrudes refractory material over the substrate. The refractory material substantially covers the outer surface of the substrate. The method then cures the refractory material.

US Patent:

20100055412, Mar 4, 2010

Filed:

Sep 3, 2009

Appl. No.:

12/553252

Inventors:

Christine Richardson - Northborough MA, US
Lawrence Felton - Hopkinton MA, US

Assignee:

EVERGREEN SOLAR, INC. - Marlborough MA

International Classification:

C01B 31/36
C23C 16/22
B32B 3/02
C30B 15/00
C01B 33/00

US Classification:

428192, 4274197, 4272493, 117 24

Abstract:

A method of forming a string for use in a string ribbon crystal provides a refractory metal as a core for the string and forms a first layer of material on the core. A method of growing a ribbon crystal provides a pair of strings. Each string has a refractory metal core. The method further passes the strings through a molten material to grow the ribbon crystal between the pair of strings.A ribbon crystal wafer includes a ribbon crystal material and a pair of strings in the ribbon crystal material. Each string defines an outer edge of the wafer, and each string includes a refractory metal core.