Christine Elizabeth Richardson

US Patent:

7557375, Jul 7, 2009

Filed:

Oct 26, 2004

Appl. No.:

10/974390

Inventors:

Christine E. Richardson - Pasadena CA, US
Harry A. Atwater - South Pasadena CA, US

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

H01L 29/00

US Classification:

257 65, 257 52, 257 75, 257E31043, 438166, 438486

Abstract:

The present invention provides methods of manufacturing of silicon in substantially crystalline form out of amorphous silicon.

US Patent:

20060108688, May 25, 2006

Filed:

Nov 16, 2005

Appl. No.:

11/274197

Inventors:

Christine Richardson - Pasadena CA, US
Harry Atwater - South Pasadena CA, US

International Classification:

H01L 23/48

US Classification:

257756000, 257750000, 257753000

Abstract:

A silicon structure includes a selective nucleating single phase epitaxial (SNSPE) template polysilicon layer containing crystallization catalyst residue, and a hot wire chemical vapor deposited (HWCVD) epitaxial polysilicon layer epitaxially grown on said template layer. The silicon structure may satisfy at least one of the following: 1) a thickness of the SNSPE template layer is less that about 60 nm; 2) a thickness of the HPCVD layer is greater than about 60 nm. The silicon structure may be used in a polysilicon solar cell or other solid state devices. A method of making a polysilicon layer includes providing a first layer comprising an amorphous silicon or a polysilicon layer containing a crystallization catalyst or in contact with a crystallization catalyst, and annealing the first layer in a silicon containing atmosphere to at least partially crystallize the first layer.