Christine Beth Richardson

US Patent:

7651768, Jan 26, 2010

Filed:

Aug 29, 2008

Appl. No.:

12/200996

Inventors:

Christine Richardson - Northborough MA, US
Weidong Huang - Acton MA, US
Richard Wallace - Acton MA, US
Daniel Doble - Brookline MA, US
Scott Reitsma - Shrewsbury MA, US

Assignee:

Evergreen Solar, Inc. - Marlborough MA

International Classification:

C23D 5/00

US Classification:

428367, 428408, 428702, 428698

Abstract:

A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees.

US Patent:

7727590, Jun 1, 2010

Filed:

May 17, 2007

Appl. No.:

11/798931

Inventors:

Christine Richardson - Northboro MA, US
Harry A. Atwater - South Pasadena CA, US

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

C23C 16/00

US Classification:

42724911, 118718

Abstract:

A hot wire chemical vapor deposition apparatus comprises a vacuum chamber, a substrate support member located in the vacuum chamber, a filament assembly support member located in the vacuum chamber, a precursor gas inlet located in the vacuum chamber and a device for providing a clean portion of at least one filament inside the vacuum chamber without breaking vacuum.

US Patent:

7842270, Nov 30, 2010

Filed:

Dec 9, 2009

Appl. No.:

12/633951

Inventors:

Christine Richardson - Northborough MA, US
Weidong Huang - Acton MA, US
Richard Wallace - Acton MA, US
Daniel Doble - Brookline MA, US
Scott Reitsma - Shrewsbury MA, US

Assignee:

Evergreen Solar, Inc. - Marlborough MA

International Classification:

C01B 33/02

US Classification:

423349, 423348

Abstract:

A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees.

US Patent:

20090061224, Mar 5, 2009

Filed:

Aug 29, 2008

Appl. No.:

12/201180

Inventors:

Christine Richardson - Northborough MA, US
Lawrence Felton - Hopkinton MA, US

Assignee:

EVERGREEN SOLAR, INC. - Marlborough MA

International Classification:

B32B 18/00
B05D 3/02
B05D 1/00
B32B 1/00

US Classification:

428373, 4273722, 4273977, 428391, 428367

Abstract:

A method of making string for string ribbon crystal provides a substrate having an outer surface, and extrudes refractory material over the substrate. The refractory material substantially covers the outer surface of the substrate. The method then cures the refractory material.

US Patent:

20100055412, Mar 4, 2010

Filed:

Sep 3, 2009

Appl. No.:

12/553252

Inventors:

Christine Richardson - Northborough MA, US
Lawrence Felton - Hopkinton MA, US

Assignee:

EVERGREEN SOLAR, INC. - Marlborough MA

International Classification:

C01B 31/36
C23C 16/22
B32B 3/02
C30B 15/00
C01B 33/00

US Classification:

428192, 4274197, 4272493, 117 24

Abstract:

A method of forming a string for use in a string ribbon crystal provides a refractory metal as a core for the string and forms a first layer of material on the core. A method of growing a ribbon crystal provides a pair of strings. Each string has a refractory metal core. The method further passes the strings through a molten material to grow the ribbon crystal between the pair of strings.A ribbon crystal wafer includes a ribbon crystal material and a pair of strings in the ribbon crystal material. Each string defines an outer edge of the wafer, and each string includes a refractory metal core.

US Patent:

20110247546, Oct 13, 2011

Filed:

Apr 5, 2011

Appl. No.:

13/079838

Inventors:

Christine Richardson - Northborough MA, US
Weidong Huang - Bolton MA, US
Richard L. Wallace - Acton MA, US
Daniel Doble - Somerville MA, US
Scott Reitsma - Shrewsbury MA, US

Assignee:

EVERGREEN SOLAR, INC. - Marlborough MA

International Classification:

C30B 15/30
C03B 15/02

US Classification:

117 24, 65 90

Abstract:

A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body.

US Patent:

20120125254, May 24, 2012

Filed:

Nov 23, 2010

Appl. No.:

12/952288

Inventors:

Brian D. Kernan - Newton MA, US
Gary J. Tarnowski - Acton MA, US
Weidong Huang - Bolton MA, US
Scott Reitsma - Shrewsbury MA, US
Christine Richardson - Northborough MA, US

Assignee:

EVERGREEN SOLAR, INC. - Marlborough MA

International Classification:

C30B 11/02

US Classification:

117 78

Abstract:

A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane.