Christopher R Clifford

US Patent:

8555214, Oct 8, 2013

Filed:

Feb 4, 2011

Appl. No.:

13/021591

Inventors:

Christopher Heinz Clifford - San Francisco CA, US

Assignee:

Luminescent Technologies, Inc. - Palo Alto CA

International Classification:

G06F 17/50

US Classification:

716 55, 716126, 716132, 716139

Abstract:

During a calculation technique, contributions to reflected light from multiple discrete cells in a model of a multilayer stack in a reflective photo-mask may be determined based on angles of incidence of light in a light pattern to the multilayer stack, a polarization of the light in the light pattern, and a varying intensity of the light in the light pattern through the multilayer stack. Then, phase values of the contributions to the reflected light from the multiple discrete cells are adjusted, thereby specifying optical path differences between the multiple discrete cells in the multilayer stack that are associated with the defect. Moreover, the contributions to the reflected light from multiple discrete cells are combined to determine the reflected light from the multilayer stack. Next, k-space representations of the contributions to the reflected light from the multiple discrete cells are selectively shifted based on the angles of incidence.

US Patent:

8612903, Dec 17, 2013

Filed:

Feb 9, 2011

Appl. No.:

13/024233

Inventors:

Linyong Pang - Los Gatos CA, US
Christopher Heinz Clifford - San Francisco CA, US

Assignee:

Luminescent Technologies, Inc. - Palo Alto CA

International Classification:

G06F 17/50

US Classification:

716 55, 716132

Abstract:

During a calculation technique, a modification to a reflective photo-mask is calculated. In particular, using information associated with different types of analysis techniques a group of one or more potential defects in the reflective photo-mask is determined. Then, the modification to the reflective photo-mask is calculated based on at least a subset of the group of potential defects using an inverse optical calculation. In particular, during the inverse optical calculation, a cost function at an image plane in a model of the photolithographic process is used to determine the modification to the reflective photo-mask at an object plane in the model of the photolithographic process.

US Patent:

20140220786, Aug 7, 2014

Filed:

Feb 1, 2013

Appl. No.:

13/757286

Inventors:

- Grand Cayman, KY
Christopher Heinz Clifford - San Francisco CA, US
Tamer Coskun - San Jose CA, US

Assignee:

GLOBALFOUNDRIES, INC. - Grand Cayman

International Classification:

G06F 17/50
H01L 21/02

US Classification:

438758, 716 53

Abstract:

A method of manufacturing an optical lithography mask includes providing a patterned layout design comprising a plurality of polygons, correcting the patterned layout design using optical proximity correction (OPC) by adjusting widths and lengths of one or more of the plurality of polygons, to generate a corrected patterned layout design, converting the corrected patterned layout design into a mask writer-compatible format, to generate a mask writer-compatible layout design comprising the plurality of polygons, and biasing each polygon in the plurality of polygons with a bias that accounts for large-scale density values of the patterned layout design, to generate a biased, mask writer-compatible layout design.