Christopher J Macdonald

US Patent:

20190198346, Jun 27, 2019

Filed:

Dec 14, 2018

Appl. No.:

16/220248

Inventors:

- Waltham MA, US
Kamal Tabatabaie Alavi - Sharon MA, US
Adrian D. Williams - Methuen MA, US
Christopher J. MacDonald - Medford MA, US
Kiuchul Hwang - Amherst NH, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/321
H01L 21/285
H01L 21/3205
H01L 29/45

Abstract:

A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

US Patent:

20180323274, Nov 8, 2018

Filed:

Jul 12, 2018

Appl. No.:

16/033500

Inventors:

- Waltham MA, US
Kezia Cheng - Lowell MA, US
Christopher J. MacDonald - Medford MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 29/47
H01L 29/778
H01L 21/285
H01L 29/20
H01L 29/78

Abstract:

A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.

US Patent:

20180033744, Feb 1, 2018

Filed:

Jul 26, 2016

Appl. No.:

15/219327

Inventors:

- Waltham MA, US
Adrian D. Williams - Methuen MA, US
Christopher J. MacDonald - Medford MA, US
Kamal Tabatabaie Alavi - Sharon MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 23/64
H01L 21/768
H01L 21/324
H01L 23/58

Abstract:

A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing “dummy” fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of “dummy” fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the “dummy” fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the “dummy” fill elements into microwave lossy “dummy” fill elements.

US Patent:

20150111379, Apr 23, 2015

Filed:

Jan 5, 2015

Appl. No.:

14/589251

Inventors:

- Waltham MA, US
Paul M. Ryan - Boston MA, US
Christopher J. MacDonald - Medford MA, US

International Classification:

H01L 21/32
H01L 21/768

US Classification:

438669

Abstract:

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

US Patent:

20150097290, Apr 9, 2015

Filed:

Oct 4, 2013

Appl. No.:

14/045974

Inventors:

- Waltham MA, US
Kamal Tabatabale - Sharon MA, US
Frederick A. Rose - Atkinson NH, US
Christopher J. MacDonald - Medford MA, US
Paul M. Ryan - Boston MA, US
Kurt V. Smith - Tyngsboro MA, US
Irl W. Smith - Concord MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 23/532

US Classification:

257751

Abstract:

A structure having first and second electrical conductors disposed on a surface of the structure and a bridging conductor connected between the first electrical conductor and the second electrical conductor with portions disposed over the surface of the structure. The bridging conductor includes a plurality of stacked, multi-metal layers, each one of the multi-metal layers having: an electrically conductive layer; and a pair of barrier metal layers, the electrically conductive layer being disposed between and in direct contact with the pair of barrier metal layers.

US Patent:

20140319586, Oct 30, 2014

Filed:

Apr 26, 2013

Appl. No.:

13/871190

Inventors:

- Waltham MA, US
Paul M. Ryan - Boston MA, US
Christopher J. MacDonald - Medford MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/321
H01L 29/78

US Classification:

257288, 438597

Abstract:

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.