Christopher P Macdonald

US Patent:

20190198346, Jun 27, 2019

Filed:

Dec 14, 2018

Appl. No.:

16/220248

Inventors:

- Waltham MA, US
Kamal Tabatabaie Alavi - Sharon MA, US
Adrian D. Williams - Methuen MA, US
Christopher J. MacDonald - Medford MA, US
Kiuchul Hwang - Amherst NH, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/321
H01L 21/285
H01L 21/3205
H01L 29/45

Abstract:

A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

US Patent:

20150111379, Apr 23, 2015

Filed:

Jan 5, 2015

Appl. No.:

14/589251

Inventors:

- Waltham MA, US
Paul M. Ryan - Boston MA, US
Christopher J. MacDonald - Medford MA, US

International Classification:

H01L 21/32
H01L 21/768

US Classification:

438669

Abstract:

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

US Patent:

20150097290, Apr 9, 2015

Filed:

Oct 4, 2013

Appl. No.:

14/045974

Inventors:

- Waltham MA, US
Kamal Tabatabale - Sharon MA, US
Frederick A. Rose - Atkinson NH, US
Christopher J. MacDonald - Medford MA, US
Paul M. Ryan - Boston MA, US
Kurt V. Smith - Tyngsboro MA, US
Irl W. Smith - Concord MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 23/532

US Classification:

257751

Abstract:

A structure having first and second electrical conductors disposed on a surface of the structure and a bridging conductor connected between the first electrical conductor and the second electrical conductor with portions disposed over the surface of the structure. The bridging conductor includes a plurality of stacked, multi-metal layers, each one of the multi-metal layers having: an electrically conductive layer; and a pair of barrier metal layers, the electrically conductive layer being disposed between and in direct contact with the pair of barrier metal layers.

US Patent:

20140319586, Oct 30, 2014

Filed:

Apr 26, 2013

Appl. No.:

13/871190

Inventors:

- Waltham MA, US
Paul M. Ryan - Boston MA, US
Christopher J. MacDonald - Medford MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/321
H01L 29/78

US Classification:

257288, 438597

Abstract:

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.