Chuan Yueh Wang

US Patent:

20220251614, Aug 11, 2022

Filed:

Apr 22, 2022

Appl. No.:

17/726926

Inventors:

- South San Francisco CA, US
Chuan Wang - South San Francisco CA, US
Jessica Leigh Ochoa - South San Francisco CA, US
Cliff Rutt - South San Francisco CA, US

International Classification:

C12P 13/02
C12N 1/18
C12N 15/81
C12N 15/52
C12P 13/22

Abstract:

Disclosed herein are recombinant host cells and methods capable of producing a tyramine containing hydroxycinnamic acid amide compounds, derivatives and extracts. Some embodiments provided include, for example, consumable products containing the tyramine containing hydroxycinnamic acid amide produced by the recombinant host cells. Some embodiments provided herein are methods for producing a tyramine containing hydroxycinnamic acid amide or hydroxycinnamic acid amide derivative.

US Patent:

20220237763, Jul 28, 2022

Filed:

Feb 24, 2022

Appl. No.:

17/680012

Inventors:

- San Francisco CA, US
Chuan Wang - San Francisco CA, US
Diane Wiener - San Francisco CA, US

International Classification:

G06T 7/00
G06T 7/11
G01N 1/38
G01N 21/51
H04N 5/225
H04N 5/247

Abstract:

A system for high throughput foam analysis includes a foam generation system, an illumination source, a detection system and an analysis system. A foam generation system includes a first plurality of foaming units, each foaming unit including a foaming chamber and a gas induction mechanism. The illumination source provides an illumination to the foaming chamber of each foaming unit. The detection system includes a first camera configured to temporally record the foaming process in each foaming unit, thereby producing a first plurality of frames. The analysis system includes: at least one processor, and a memory including instructions for (i) obtaining a first respective frame in the first plurality of frames; (ii) segmenting the first respective frame into a first plurality of segmented images, and (iii) extracting, from each segmented image, one or more characteristics of the foam, thereby facilitating high throughput foam analysis of the first plurality of solutions.

US Patent:

20220216048, Jul 7, 2022

Filed:

Jan 6, 2021

Appl. No.:

17/142641

Inventors:

- Santa Clara CA, US
Deenesh Padhi - Sunnyvale CA, US
Xinhai Han - Santa Clara CA, US
Hang Yu - San Jose CA, US
Chuan Ying Wang - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/02

Abstract:

Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

US Patent:

20210366090, Nov 25, 2021

Filed:

Sep 13, 2018

Appl. No.:

16/647830

Inventors:

- San Francisco CA, US
Chuan Wang - San Francisco CA, US
Diane Wiener - San Francisco CA, US

International Classification:

G06T 7/00
G01N 21/51
G01N 1/38
H04N 5/247
H04N 5/225
G06T 7/11

Abstract:

A system for high throughput foam analysis includes a foam generation system, an illumination source, a detection system and an analysis system. A foam generation system includes a first plurality of foaming units, each foaming unit including a foaming chamber and a gas induction mechanism. The illumination source provides an illumination to the foaming chamber of each foaming unit. The detection system includes a first camera configured to temporally record the foaming process in each foaming unit, thereby producing a first plurality of frames. The analysis system includes: at least one processor, and a memory including instructions for (i) obtaining a first respective frame in the first plurality of frames; (ii) segmenting the first respective frame into a first plurality of segmented images, and (iii) extracting, from each segmented image, one or more characteristics of the foam, thereby facilitating high throughput foam analysis of the first plurality of solutions.

US Patent:

20210040607, Feb 11, 2021

Filed:

Aug 6, 2020

Appl. No.:

16/986632

Inventors:

- Santa Clara CA, US
Hang Yu - Santa Clara CA, US
Kesong Hu - Pleasanton CA, US
Kristopher Enslow - San Jose CA, US
Masaki Ogata - Santa Clara CA, US
Wenjiao Wang - Santa Clara CA, US
Chuan Ying Wang - Sunnyvale CA, US
Chuanxi Yang - Los Altos CA, US
Joshua Maher - Santa Clara CA, US
Phaik Lynn Leong - Singapore, SG
Qi En Teong - Singapore, SG
Alok Jain - Singapore, SG
Nagarajan Rajagopalan - Santa Clara CA, US
Deenesh Padhi - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/34
H01L 27/11524
H01L 27/11551
H01L 27/1157
H01L 27/11578
C23C 16/40

Abstract:

Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

US Patent:

20200227258, Jul 16, 2020

Filed:

Oct 9, 2019

Appl. No.:

16/597466

Inventors:

- Santa Clara CA, US
Ganesh BALASUBRAMANIAN - Fremont CA, US
Arkajit ROY BARMAN - Singapore, SG
Hidehiro KOJIRI - Sunnyvale CA, US
Xinhai HAN - Santa Clara CA, US
Deenesh PADHI - Sunnyvale CA, US
Chuan Ying WANG - Sunnyvale CA, US
Yue CHEN - Sunnyvale CA, US
Daemian Raj BENJAMIN RAJ - Fremont CA, US
Nikhil Sudhindrarao JORAPUR - Sunnyvale CA, US
Vu Ngoc Tran NGUYEN - Santa Clara CA, US
Miguel S. FUNG - Sunnyvale CA, US
Jose Angelo OLAVE - Angeles, PH
Thian Choi LIM - Singapore, SG

International Classification:

H01L 21/02
H01L 21/67

Abstract:

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

US Patent:

20170330097, Nov 16, 2017

Filed:

Jul 31, 2017

Appl. No.:

15/665082

Inventors:

- San Francisco CA, US
Josh Stephen Tetrick - San Francisco CA, US
Meng Xu - San Francisco CA, US
Matthew D. Schultz - San Francisco CA, US
Chuan Wang - San Francisco CA, US
Nicolas Tilmans - San Francisco CA, US
Michael Brzustowicz - San Francisco CA, US

International Classification:

G06N 5/04
G06N 99/00

Abstract:

Systems and methods for assaying a test entity for a property, without measuring the property, are provided. Exemplary test entities include proteins, protein mixtures, and protein fragments. Measurements of first features in a respective subset of an N-dimensional space and of second features in a respective subset of an M-dimensional space, is obtained as training data for each reference in a plurality of reference entities. One or more of the second features is a metric for the target property. A subset of first features, or combinations thereof, is identified using feature selection. A model is trained on the subset of first features using the training data. Measurement values for the subset of first features for the test entity are applied to thereby obtaining a model value that is compared to model values obtained using measured values of the subset of first features from reference entities exhibiting the property.

US Patent:

20170187677, Jun 29, 2017

Filed:

Mar 16, 2017

Appl. No.:

15/461144

Inventors:

- Santa Clara CA, US
Steven Whittle - Redwood City CA, US
Chuan Wang - Vienna VA, US

International Classification:

H04L 29/12
G06F 9/455
G06F 17/30
G06F 9/50

Abstract:

Provisioning an Internet Protocol address is disclosed. A request to provision an Internet Protocol address to a virtual resource is received. An Internet Protocol address is automatically determined to allocate to the virtual resource. The determined Internet Protocol address was selected from a group of Internet Protocol addresses potentially available to be assigned to the virtual resource of the received request.