Chung Y. Chen - Scotch Plains NJ Alfred Y. Cho - Summit NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 29161 H01L 2714 H01L 2912
US Classification:
357 30
Abstract:
A majority carrier photodetector has high sensitivity and fast response times. The photodetector comprises a thin highly doped layer surrounded on either side by two nominally undoped layers which are completely depleted at thermal equilibrium.
Chung Y. Chen - Scotch Plains NJ Alfred Y. Cho - Summit NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 2980 H01L 2956
US Classification:
357 22
Abstract:
A thin and highly doped Ga. sub. 47 In. sub. 53 As layer disposed on a Ga. sub. 47 In. sub. 53 As layer increases the barrier height and produces useful device characteristics. For example, the structure may be used as the gate electrode in an InGaAs field effect transistor.
American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 21306 B44C 122 C03C 1500 C03C 2506
US Classification:
156644
Abstract:
A new technique called stop cleaving permits semiconductor lasers having etched mirrors to be fabricated on a common substrate with other optical or electronic components such as photodetectors and field-effect transistors.
Gallium Arsenide On Gallium Indium Arsenide Schottky Barrier Device
Chung Y. Chen - New Providence NJ Alfred Y. Cho - Summit NJ
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 29201 H01L 2956 H01L 2980
US Classification:
357 22
Abstract:
Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.
Chung Y. Chen - Scotch Plains NJ Alfred Y. Cho - Summit NJ
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 29205 H01L 2970
US Classification:
357 34
Abstract:
We have found that transistors have desirable device characteristics when the base region is composed of a lightly doped layer near the emitter junction and a heavily doped layer near the collector junction. The edge of the depletion region at the emitter-base junction is designed to stop in the lightly doped base region.
Apex Radiology Medical Group 890 W Stetson Ave STE B, Hemet, CA 92543 (951)5376002 (phone), (951)5376013 (fax)
Hemet Valley Imaging 1001 E Latham Ave STE G, Hemet, CA 92543 (951)6589243 (phone), (951)7655415 (fax)
Education:
Medical School Taipei Med Coll, Taipei, Taiwan (385 04 Prior 1/71) Graduated: 1970
Languages:
Chinese English Spanish
Description:
Dr. Chen graduated from the Taipei Med Coll, Taipei, Taiwan (385 04 Prior 1/71) in 1970. He works in Hemet, CA and 1 other location and specializes in Diagnostic Radiology. Dr. Chen is affiliated with Hemet Valley Medical Center, Kaiser Medical Center Moreno Valley, Menifee Valley Medical Center and Victor Valley Global Medical Center.
The study's other co-corresponding authors are Yang Yang, Van Andel Institute, and Ping-Chung Chen, St. Jude. The study's first authors are Masihuz Zaman, Shu Yang and Ya Huang, St. Jude. The study's other authors are Geidy Serrano and Thomas Beach, Banner Sun Health Research Institute; Gang Yu, Uni