Chung Heng Lee

US Patent:

6534616, Mar 18, 2003

Filed:

Apr 17, 2001

Appl. No.:

09/836815

Inventors:

Chung J. Lee - Fremont CA
Hui Wang - Fremont CA
Giovanni Antonio Foggiato - Morgan Hill CA

Assignee:

Quester Technology, Inc. - Fremont CA

International Classification:

C08G 7724

US Classification:

528 42, 528 31, 528 43, 528397, 528401, 25218211, 438780

Abstract:

Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp CâF and some hyperconjugated sp CâF bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

US Patent:

6663973, Dec 16, 2003

Filed:

Dec 20, 1999

Appl. No.:

09/468378

Inventors:

Chung J. Lee - Fremont CA
Hui Wang - Fremont CA
Giovanni Antonio Foggiato - Morgan Hill CA

Assignee:

Canon, USA, Inc. - Lake Success NY

International Classification:

B32B 904

US Classification:

428447, 427489, 427515, 428450

Abstract:

Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2. 0 to 2. 6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for 0. 18 m ICs, or when copper is used as conductor in future ICs.

US Patent:

6797343, Sep 28, 2004

Filed:

Dec 20, 2001

Appl. No.:

10/028198

Inventors:

Chung J. Lee - Fremont CA

Assignee:

Dielectric Systems, Inc. - Fremont CA

International Classification:

B32B 2728

US Classification:

428 11, 428421, 428500, 526244, 526251

Abstract:

New precursors and processes are disclosed for making fluorinated, low dielectric constant â thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future 0. 13 m integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

US Patent:

6825303, Nov 30, 2004

Filed:

Feb 26, 2001

Appl. No.:

09/795217

Inventors:

Chung J. Lee - Fremont CA

Assignee:

Dielectric Systems, Inc. - Fremont CA

International Classification:

C08F 1220

US Classification:

526242, 5263481, 526346, 528244, 528401

Abstract:

New precursors and processes to generate fluorinated poly(para-xylylenes) (âPPXâ) and their chemically modified films suitable for fabrications of integrated circuits (âICsâ) of 0. 15 m are disclosed. The films so prepared have low dielectric constants (âââ) and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of ICs can be assured.

US Patent:

6881447, Apr 19, 2005

Filed:

Apr 4, 2002

Appl. No.:

10/116724

Inventors:

Chung J. Lee - Fremont CA, US
Atul Kumar - Fremont CA, US

Assignee:

Dielectric Systems, Inc. - Fremont CA

International Classification:

C23C016/56

US Classification:

4272556, 42725511, 42725521, 4272481, 427309, 526346, 118724, 118725

Abstract:

Preparation methods and stabilization processes for low k polymers that consist of spC—X and HC-spC—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20 C. to −50 C. to +20 C. to +50 C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20 C. to −50 C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

US Patent:

6962871, Nov 8, 2005

Filed:

Mar 31, 2004

Appl. No.:

10/816205

Inventors:

Chung J. Lee - Fremont CA, US
Atul Kumar - Santa Clara CA, US

Assignee:

Dielectric Systems, Inc. - Fremont CA

International Classification:

H01L021/4763

US Classification:

438624, 438628

Abstract:

An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

US Patent:

7009016, Mar 7, 2006

Filed:

Apr 5, 2004

Appl. No.:

10/818854

Inventors:

Chung J. Lee - Fremont CA, US

Assignee:

Dielectric Systems, Inc. - Fremont CA

International Classification:

C08F 214/18
B32B 27/28

US Classification:

526244, 526251, 428 11, 428421, 428500

Abstract:

New precursors and processes are disclosed for making fluorinated, low dielectric constant ∈ thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future

US Patent:

7026052, Apr 11, 2006

Filed:

Oct 4, 2002

Appl. No.:

10/265281

Inventors:

Chung J. Lee - Fremont CA, US
Atul Kumar - Fremont CA, US

Assignee:

Dielectric Systems, Inc. - Fremont CA

International Classification:

B32B 3/00
B32B 27/00

US Classification:

4284111, 428421, 428422, 428500

Abstract:

The present invention pertains to a processing method to produce a porous polymer film that consists of spC—X and HC-spC—X bonds (wherein, X═H or F), and exhibits at least a crystal melting temperature, (“T”). The porous polymer films produced by this invention are useful for fabricating future integrated circuits (“IC's”). The method described herein is useful for preparing the porous polymer films by polymerizing reactive intermediates, formed from a first-precursor, with a low feed rate and at temperatures equal to or below a melting temperature of intermediate (T). Second-precursors that do not become reactive intermediates or have an incomplete conversion to reactive intermediates are also transported to a deposition chamber and become an inclusion of the deposited film. By utilizing a subsequent in-situ, post treatment process the inclusions in the deposited film can be removed to leave micro-pores in the resultant film. Annealing methods are used herein to stabilize the polymer films after reactive plasma etching.