Chung Li Wu

US Patent:

20120192115, Jul 26, 2012

Filed:

Jul 27, 2011

Appl. No.:

13/191773

Inventors:

Benjamin Falchuk - Upper Nyack NY, US
Chung Ying Wu - New York NY, US

Assignee:

TELCORDIA TECHNOLOGIES, INC. - Piscataway NJ

International Classification:

G06F 3/048
G06T 17/00

US Classification:

715850

Abstract:

A system for interactive media skimming and search on a device comprises a scene manager building a model of a 3D scene of a multimedia segment of the media visible on a screen of the device, facets of scene objects in the 3D scene are used to dynamically convey visual imagery as a texture from a multimedia source and maintaining a logical navigable relationship between the scene objects, the object facets and the multimedia segments, and further comprising an interaction manager, a user manager securely storing user information and preferences, a playback component initiating rough or high definition playback, a texturizer creating a 2D texture artifact from a set of the multimedia segments in the media for a 3D facet, a transformer transforming and modifying pixels, a cache and scene heuristics maintaining a set of 3D scenes comprising objects, object facets, a virtual camera, and positions of the objects.

US Patent:

43222536, Mar 30, 1982

Filed:

Apr 30, 1980

Appl. No.:

6/145239

Inventors:

Jacques I. Pankove - Princeton NJ
Chung P. Wu - Trenton NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2126
H01L 21265
H01L 4500

US Classification:

148 15

Abstract:

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1. 1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

US Patent:

43920110, Jul 5, 1983

Filed:

Oct 8, 1981

Appl. No.:

6/309695

Inventors:

Jacques I. Pankove - Princeton NJ
Chung P. Wu - Trenton NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 3106

US Classification:

136261

Abstract:

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1. 1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

US Patent:

43199542, Mar 16, 1982

Filed:

Feb 27, 1981

Appl. No.:

6/238804

Inventors:

Lawrence K. White - East Windsor NJ
Chung P. Wu - Mercerville NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21306

US Classification:

156628

Abstract:

The method involves the formation of conductive, polycrystalline silicon lines and vias by the conversion of amorphous silicon in contact with the underlying silicon substrate through the use of a laser annealing process.

US Patent:

39335305, Jan 20, 1976

Filed:

Jan 28, 1975

Appl. No.:

5/544702

Inventors:

Charles William Mueller - Princeton NJ
Edward Curtis Douglas - Princeton Junction NJ
Chung Pao Wu - Trenton NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21265

US Classification:

148 15

Abstract:

In one embodiment, a semiconductor device, such as an insulated-gate-field-effect-transistor (IGFET), is simultaneously radiation hardened with Al ions and its threshold voltage stabilized with halide ions, such as Cl ions, by bombarding a silicon dioxide gate insulator of the device with molecular ions of an aluminum halide, such as AlCl. sub. 2. sup. + ions. In another embodiment, a surface (target) of silicon is bombarded with molecular AlCl. sub. 2. sup. + ions to ion implant separate Al ions and Cl ions. There, an oxide layer subsequently thermally grown on the bombarded surface includes the Al ions and the Cl ions, and the oxide layer is radiation hardened and gettered.