Cun-Zheng Ning

US Patent:

6865208, Mar 8, 2005

Filed:

Jun 10, 2002

Appl. No.:

10/171554

Inventors:

Peter M. Goorjian - Oakland CA, US
Cun-Zheng Ning - San Jose CA, US

Assignee:

The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC

International Classification:

H01S005/00
H01S003/00

US Classification:

372 50, 372 3802

Abstract:

Ultrafast directional beam switching is achieved using coupled VCSELs. This approach is demonstrated to achieve beam switching frequencies of 40 GHz and more and switching directions of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches.

US Patent:

7286573, Oct 23, 2007

Filed:

Aug 12, 2004

Appl. No.:

10/923160

Inventors:

Cun-Zheng Ning - San Jose CA, US

Assignee:

United States of America as Represented by the Administrator of the National Aeronautics and Space Administration (NASA) - Washington DC

International Classification:

H01S 3/30
H01S 5/00
H01L 29/06
H01L 29/372

US Classification:

372 4, 372 4501, 372 45012, 257 14, 257184, 977755, 977758, 977820

Abstract:

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

US Patent:

20110272744, Nov 10, 2011

Filed:

Nov 6, 2009

Appl. No.:

13/126864

Inventors:

Cun-zheng Ning - Chandler AZ, US

Assignee:

ARIZONA BOARD OF REGENTS, a body corporate acting for and on behalf of ARIZONA STATE UNIVERSITY - Scottdale AZ

International Classification:

H01L 29/221
H01B 1/10
H01L 29/225
H01L 21/40
B82Y 99/00
B82Y 40/00

US Classification:

257201, 257614, 438478, 25251914, 257E29097, 257E29096, 257E2147, 977762

Abstract:

Described herein are semiconductor structures comprising laterally varying II-VI alloy layer formed over a surface of a substrate. Further, methods are provided for preparing laterally varying II-VI alloy layers over at least a portion of a surface of a substrate comprising contacting at least a portion of a surface of a substrate within a reaction zone with a chemical vapor under suitable reaction conditions to form a laterally varying II-VI alloy layer over the portion of the surface of the substrate, wherein the chemical vapor is generated by heating at least two II-VI binary compounds; and the reaction zone has a temperature gradient of at least 50-100 C. along an extent of the reaction zone. Also described here are devices such as lasers, light emitting diodes, detectors, or solar cells that can use such semiconductor structures. In the case of lasers, spatially varying wavelength can be realized while in the case of solar cells and detectors multiple solar cells can be achieved laterally where each cell absorbs solar energy of a given wavelength range such that entire solar spectrum can be covered by the said solar cell structure. For LED applications, spatial variation of alloy composition can be used to engineer colors of light emission.

US Patent:

20120318324, Dec 20, 2012

Filed:

Jun 14, 2012

Appl. No.:

13/517823

Inventors:

Cun-Zheng Ning - Chandler AZ, US
Derek Caselli - Scottsdale AZ, US

Assignee:

Arizona Board of Regents, a body corporate of the State of Arizona, Acting for and on behalf of Ariz - Scottsdale AZ

International Classification:

H01L 31/052
B82Y 30/00

US Classification:

136246, 977762, 977819, 977824, 977948

Abstract:

A solar cell assembly can be prepared having one or more laterally-arranged multiple bandgap (LAMB) solar cells and a dispersive concentrator positioned to provide light to a surface of each of the LAMB cells. As described herein, each LAMB cell comprises a plurality of laterally-arranged solar cells each having a different bandgap.

US Patent:

61309036, Oct 10, 2000

Filed:

Feb 6, 1998

Appl. No.:

9/019976

Inventors:

Jerome V. Moloney - Tucson AZ
Robert Indik - Tucson AZ
Cun-Zheng Ning - San Jose CA
Peter Matths Wippel Skovgaard - Cork, IE
John G. McInerney - Cork, IE

Assignee:

The Arizona Board of Regents on behalf of the University of Arizona - Tucson AZ

International Classification:

H01S 319

US Classification:

372 46

Abstract:

An MFA-MOPA that includes a semiconductor laser with separate master oscillator and trumpet-flared power amplifier regions. Within the trumpet-flared active gain region of the uniformly-pumped power amplifier of the MFA-MOPA device, the density distribution of carriers and reflections of the laser beam are analyzed to determine the output powers at which filamentation and beam degradation due to reflections occur. The shape of the trumpet-flare is optimized to delay the onset of filamentation and the degradation of the output laser beam due to reflections to higher output powers for the MFA-MOPA device.

US Patent:

20190172966, Jun 6, 2019

Filed:

Jan 29, 2019

Appl. No.:

16/261027

Inventors:

Alan Chin - Mountain View CA, US
Cun-Zheng Ning - Chandler AZ, US

International Classification:

H01L 31/18
H01L 31/046
H01L 31/0352

Abstract:

Reusable nanostructured substrates for forming semiconductor thin films, such as those used in solar cells, are configured with nanopillars to permit improved lift-off of thin films.

US Patent:

20160208163, Jul 21, 2016

Filed:

Jan 21, 2016

Appl. No.:

15/003054

Inventors:

- Scottsdale AZ, US
Cun-Zheng Ning - Chandler AZ, US

International Classification:

C09K 11/77
C04B 35/76

Abstract:

Embodiments of the invention provide a ceramic composites and synthesis methods that include providing a plurality of nanoparticles with at least one first rare-earth single-crystal compound, and mixing the plurality of nanoparticles with at least one ceramic material and at least one ceramic binder including at least one solvent. The method further includes preparing a ceramic green-body from the mixture, and sintering the ceramic green-body to form a ceramic composite of a polycrystalline ceramic with a plurality of embedded single-crystal nanorods. The embedded single-crystal nanorods include at least one second rare-earth single crystal compound. The at least one second rare-earth single crystal compound can include or be derived from the at least one first rare-earth single crystal compound.