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Cun-Zheng Ning

age ~61

from Chandler, AZ

Cun-Zheng Ning Phones & Addresses

  • Chandler, AZ
  • San Jose, CA

Resumes

Cun-Zheng Ning Photo 1

Professor Of Electrical Engineering (Nanophotonics, Semiconductor Optoelectronics, Nanowires, Plasmonics)

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Position:
Prof at Arizona State University
Location:
Phoenix, Arizona Area
Industry:
Research
Work:
Arizona State University since Nov 2006
Prof

NASA Ames Research Center May 1997 - Jun 2007
Senior Scientist and Group Leader

University of Tokyo Jun 2006 - Sep 2006
ISSP Visiting Professor

University of Arizona Jan 1994 - May 1997
Research Assistant Professor
Education:
Universit├Ąt Stuttgart 1986 - 1991
Northwest University 1978 - 1985
Master, Physics
Interests:
Nanophotonics, semiconductor optoelectronic devices and physics, solar cells, nanowires, plasmonics, detectors, lasers
Cun-Zheng Ning Photo 2

Cun-Zheng Ning

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Location:
United States

Us Patents

  • Ultrafast Laser Beam Switching And Pulse Train Generation By Using Coupled Vertical-Cavity, Surface-Emitting Lasers (Vcsels)

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  • US Patent:
    6865208, Mar 8, 2005
  • Filed:
    Jun 10, 2002
  • Appl. No.:
    10/171554
  • Inventors:
    Peter M. Goorjian - Oakland CA,
    Cun-Zheng Ning - San Jose CA,
  • Assignee:
    The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
  • International Classification:
    H01S005/00
    H01S003/00
  • US Classification:
    372 50, 372 3802
  • Abstract:
    Ultrafast directional beam switching is achieved using coupled VCSELs. This approach is demonstrated to achieve beam switching frequencies of 40 GHz and more and switching directions of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches.
  • Conversion Of Type Of Quantum Well Structure

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  • US Patent:
    7286573, Oct 23, 2007
  • Filed:
    Aug 12, 2004
  • Appl. No.:
    10/923160
  • Inventors:
    Cun-Zheng Ning - San Jose CA,
  • Assignee:
    United States of America as Represented by the Administrator of the National Aeronautics and Space Administration (NASA) - Washington DC
  • International Classification:
    H01S 3/30
    H01S 5/00
    H01L 29/06
    H01L 29/372
  • US Classification:
    372 4, 372 4501, 372 45012, 257 14, 257184, 977755, 977758, 977820
  • Abstract:
    A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.
  • Laterally Varying Ii-Vi Alloys And Uses Thereof

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  • US Patent:
    2011027, Nov 10, 2011
  • Filed:
    Nov 6, 2009
  • Appl. No.:
    13/126864
  • Inventors:
    Cun-zheng Ning - Chandler AZ,
  • Assignee:
    ARIZONA BOARD OF REGENTS, a body corporate acting for and on behalf of ARIZONA STATE UNIVERSITY - Scottdale AZ
  • International Classification:
    H01L 29/221
    H01B 1/10
    H01L 29/225
    H01L 21/40
    B82Y 99/00
    B82Y 40/00
  • US Classification:
    257201, 257614, 438478, 25251914, 257E29097, 257E29096, 257E2147, 977762
  • Abstract:
    Described herein are semiconductor structures comprising laterally varying II-VI alloy layer formed over a surface of a substrate. Further, methods are provided for preparing laterally varying II-VI alloy layers over at least a portion of a surface of a substrate comprising contacting at least a portion of a surface of a substrate within a reaction zone with a chemical vapor under suitable reaction conditions to form a laterally varying II-VI alloy layer over the portion of the surface of the substrate, wherein the chemical vapor is generated by heating at least two II-VI binary compounds; and the reaction zone has a temperature gradient of at least 50-100┬░ C. along an extent of the reaction zone. Also described here are devices such as lasers, light emitting diodes, detectors, or solar cells that can use such semiconductor structures. In the case of lasers, spatially varying wavelength can be realized while in the case of solar cells and detectors multiple solar cells can be achieved laterally where each cell absorbs solar energy of a given wavelength range such that entire solar spectrum can be covered by the said solar cell structure. For LED applications, spatial variation of alloy composition can be used to engineer colors of light emission.
  • Laterally Arranged Multiple-Bandgap Solar Cells

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  • US Patent:
    2012031, Dec 20, 2012
  • Filed:
    Jun 14, 2012
  • Appl. No.:
    13/517823
  • Inventors:
    Cun-Zheng Ning - Chandler AZ,
    Derek Caselli - Scottsdale AZ,
  • Assignee:
    Arizona Board of Regents, a body corporate of the State of Arizona, Acting for and on behalf of Ariz - Scottsdale AZ
  • International Classification:
    H01L 31/052
    B82Y 30/00
  • US Classification:
    136246, 977762, 977819, 977824, 977948
  • Abstract:
    A solar cell assembly can be prepared having one or more laterally-arranged multiple bandgap (LAMB) solar cells and a dispersive concentrator positioned to provide light to a surface of each of the LAMB cells. As described herein, each LAMB cell comprises a plurality of laterally-arranged solar cells each having a different bandgap.
  • Trumpet-Flared Monolithically Integrated Semiconductor Laser Amplifier

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  • US Patent:
    6130903, Oct 10, 2000
  • Filed:
    Feb 6, 1998
  • Appl. No.:
    9/019976
  • Inventors:
    Jerome V. Moloney - Tucson AZ
    Robert Indik - Tucson AZ
    Cun-Zheng Ning - San Jose CA
    Peter Matths Wippel Skovgaard - Cork,
    John G. McInerney - Cork,
  • Assignee:
    The Arizona Board of Regents on behalf of the University of Arizona - Tucson AZ
  • International Classification:
    H01S 319
  • US Classification:
    372 46
  • Abstract:
    An MFA-MOPA that includes a semiconductor laser with separate master oscillator and trumpet-flared power amplifier regions. Within the trumpet-flared active gain region of the uniformly-pumped power amplifier of the MFA-MOPA device, the density distribution of carriers and reflections of the laser beam are analyzed to determine the output powers at which filamentation and beam degradation due to reflections occur. The shape of the trumpet-flare is optimized to delay the onset of filamentation and the degradation of the output laser beam due to reflections to higher output powers for the MFA-MOPA device.

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