Cynthia A Brooks

US Patent:

6960413, Nov 1, 2005

Filed:

Mar 18, 2004

Appl. No.:

10/803867

Inventors:

Cynthia B. Brooks - Austin TX, US
Melisa J. Buie - San Jose CA, US
Brigitte C. Stoehr - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G03F009/00
G03C005/00

US Classification:

430 5, 430311, 430313, 430316, 430318, 430319, 430323, 216 67

Abstract:

Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.

US Patent:

7371485, May 13, 2008

Filed:

Oct 31, 2005

Appl. No.:

11/264189

Inventors:

Cynthia B. Brooks - Austin TX, US
Melisa J. Buie - San Jose CA, US
Brigitte C. Stoehr - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G03F 9/00
G03C 5/00

US Classification:

430 5, 430311, 430313, 430316, 430318, 430319, 430323, 216 67

Abstract:

Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.

US Patent:

8545709, Oct 1, 2013

Filed:

Apr 6, 2012

Appl. No.:

13/441500

Inventors:

Cynthia B. Brooks - Austin TX, US
Dwayne L. LaBrake - Cedar Park TX, US
Niyaz Khusnatdinov - Round Rock TX, US
Michael N. Miller - Austin TX, US
Sidlgata V. Sreenivasan - Austin TX, US
David James Lentz - Leander TX, US
Frank Y. Xu - Round Rock TX, US

Assignee:

Molecular Imprints, Inc. - Austin TX

International Classification:

C03C 15/00

US Classification:

216 41, 216 54, 264319

Abstract:

Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.

US Patent:

20090212012, Aug 27, 2009

Filed:

Feb 25, 2009

Appl. No.:

12/392685

Inventors:

Cynthia B. Brooks - Austin TX, US
Dwayne L. LaBrake - Cedar Park TX, US
Niyaz Khusnatdinov - Round Rock TX, US
Michael N. Miller - Austin TX, US
Sidlgata V. Sreenivasan - Austin TX, US
David James Lentz - Leander TX, US
Frank Y. Xu - Round Rock TX, US

Assignee:

MOLECULAR IMPRINTS, INC. - Austin TX

International Classification:

B44C 1/22
B29C 39/10

US Classification:

216 54, 264319

Abstract:

Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.

US Patent:

20100095862, Apr 22, 2010

Filed:

Oct 20, 2009

Appl. No.:

12/582471

Inventors:

Michael N. Miller - Austin TX, US
John Thomas Cowher - Austin TX, US
Cynthia B. Brooks - Austin TX, US
Dwayne L. LaBrake - Cedar Park TX, US

Assignee:

MOLECULAR IMPRINTS, INC. - Austin TX

International Classification:

B41N 1/00
B41N 3/00

US Classification:

101453, 1014631

Abstract:

The present application describes a template with feature profiles that have multiple sidewall angles. The multiple sidewall angles facilitate control over critical dimensions and reduce issues related to template release.

US Patent:

20100109194, May 6, 2010

Filed:

Oct 28, 2009

Appl. No.:

12/607564

Inventors:

Michael N. Miller - Austin TX, US
Cynthia B. Brooks - Austin TX, US
Laura Anne Brown - Austin TX, US
Gerard M. Schmid - Austin TX, US

Assignee:

MOLECULAR IMPRINTS, INC. - Austin TX

International Classification:

B29C 59/02

US Classification:

264293

Abstract:

Systems and methods for providing multiple replicas from a master template are described. Replicas may be formed having a mesa. In one embodiment, a dummy fill region may be included on master template and/or replicas.