Daniel T Distaso from Rowley, MA, age 54

Us Patents

Indirectly Heated Cathode Ion Source
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US Patent:

7138768, Nov 21, 2006
Filed:

May 23, 2002
Appl. No.:

10/154232
Inventors:

Peter E. Maciejowski - Amesbury MA, US
Joseph C. Olson - Beverly MA, US
Shengwu Chang - Newburyport MA, US
Bjorn O. Pedersen - Chelmsford MA, US
Daniel Distaso - Merrimac MA, US
Curt D. Bergeron - Danvers MA, US
Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:

H01J 7/24
US Classification:

31511181, 250427
Abstract:

An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc chamber in proximity to the filament and the cathode.

Monitoring Plasma Ion Implantation Systems For Fault Detection And Process Control
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US Patent:

7878145, Feb 1, 2011
Filed:

Jun 2, 2004
Appl. No.:

10/858582
Inventors:

Ziwei Fang - Beverly MA, US
Edmund J. Winder - Waltham MA, US
Daniel Distaso - Merrimac MA, US
Ludovic Godet - Treize Vents, FR
Bon Woong Koo - Andover MA, US
Jay T. Scheuer - Rowley MA, US
Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:

C23C 16/00
US Classification:

118712, 118723 E
Abstract:

A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

Apparatus And Method For Charge Neutralization During Processing Of A Workpiece
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US Patent:

8461554, Jun 11, 2013
Filed:

Dec 7, 2011
Appl. No.:

13/313078
Inventors:

Peter F. Kurunczi - Cambridge MA, US
Christopher J. Leavitt - Gloucester MA, US
Daniel Distaso - Merrimac MA, US
Timothy J. Miller - Ipswich MA, US
Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:

H01J 3/14
US Classification:

25049221, 250396 R, 250398, 118723 E, 118723 R, 118723 ER, 118723 ME, 118723 IR, 31511121, 315123, 315125
Abstract:

A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.

Using Beam Blockers To Perform A Patterned Implant Of A Workpiece
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US Patent:

8461556, Jun 11, 2013
Filed:

Sep 8, 2010
Appl. No.:

12/877666
Inventors:

Daniel Distaso - Merrimac MA, US
Russell J. Low - Rowley MA, US
Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:

G21K 5/10
US Classification:

25049222, 2504921, 2504922, 25049221, 2504923
Abstract:

Blockers in an ion beam blocker unit selectively block or trim an ion beam. In one instance, the ion beam has first current regions and second current regions. These current regions may be unequal. The ion beam is then implanted into a workpiece to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.

Small Form Factor Plasma Source For High Density Wide Ribbon Ion Beam Generation
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US Patent:

8590485, Nov 26, 2013
Filed:

Apr 26, 2010
Appl. No.:

12/767125
Inventors:

Costel Biloiu - Rockport MA, US
Jay Scheuer - Rowley MA, US
Joseph Olson - Beverly MA, US
Frank Sinclair - Quincy MA, US
Daniel Distaso - Merrimac MA, US
Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucestor MA
International Classification:

C23C 16/00
C23F 1/00
H01L 21/306
H05B 31/26
US Classification:

118723I, 118723 IR, 118723 AN, 118723 MR, 118723 MA, 15634548, 15634549, 31511151, 31511181
Abstract:

An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.

Control System For Indirectly Heated Cathode Ion Source
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US Patent:

20010042836, Nov 22, 2001
Filed:

Apr 4, 2001
Appl. No.:

09/825901
Inventors:

Joseph Olson - Beverly MA, US
Daniel Distaso - Merrimac MA, US
Anthony Renau - West Newbury MA, US
International Classification:

H01J027/00
US Classification:

250/424000
Abstract:

An indirectly heated cathode ion source includes an extraction current sensor for sensing ion current extracted from the arc chamber and an ion source controller for controlling the filament power supply, the bias power supply and/or the arc power supply. The ion source controller may compare the sensed extraction current with a reference extraction current and determine an error value based on the difference between the sensed extraction current and the reference extraction current. The power supplies of the indirectly heated cathode ion source are controlled to minimize the error value, thus maintaining a substantially constant extraction current. The ion source controller utilizes a control algorithm, for example a closed feedback loop, to control the power supplies in response to the error value. In a first control algorithm, the bias current Isupplied by the bias power supply is varied so as to control the extraction current I. Further according to the first control algorithm, the filament current Iand the arc voltage Vare maintained constant. According to a second control algorithm, the filament current Iis varied so as to control the extraction current I. Further according to the second control algorithm, the bias current Iand the arc voltage Vare maintained constant.

Tuning An Ion Implanter For Optimal Performance
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US Patent:

20080245957, Oct 9, 2008
Filed:

Apr 3, 2007
Appl. No.:

11/695747
Inventors:

Atul Gupta - Beverly MA, US
Jay Scheuer - Rowley MA, US
Daniel Distaso - Merrimac MA, US
Antonella Cucchetti - Beverly MA, US
William G. Callahan - Rockport MA, US
International Classification:

G21K 5/00
G01D 18/00
US Classification:

2502521, 2504923
Abstract:

An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings.

Plasma Doping System With In-Situ Chamber Condition Monitoring
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US Patent:

20090104719, Apr 23, 2009
Filed:

Oct 23, 2007
Appl. No.:

11/877312
Inventors:

Atul Gupta - Beverly MA, US
Timothy Miller - Ipswich MA, US
Harold M. Persing - Westbrook ME, US
Daniel Distaso - Merrimac MA, US
Vikram Singh - North Andover MA, US
Assignee:

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA
International Classification:

H01L 21/66
US Classification:

438 7, 438 16, 257E21521
Abstract:

A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.