Daniel S Duncan

US Patent:

20210090652, Mar 25, 2021

Filed:

Sep 25, 2019

Appl. No.:

16/583157

Inventors:

- Santa Clara CA, US
Daniel CHU - Folsom CA, US
Daniel DUNCAN - Santa Clara CA, US

International Classification:

G11C 13/00

Abstract:

A program current pulse (e.g., reset or set pulse) for a cross-point memory cell can be generated with improved efficiency and effectiveness by controlling the voltage applied to a selection transistor near the memory cell to increase current through the memory cell. In one example, a method involves applying a first voltage to a gate of a selection transistor coupled between the memory cell and a first supply voltage and transitioning the first voltage applied to the gate of the selection transistor to a second voltage. The transition from the first voltage to the second voltage causes an increase of current through the memory cell due to a charge sharing event between capacitances at the terminals of the selection transistor. The current path through the memory cell can then be disabled to terminate the program current pulse.