Daniel C Pham

US Patent:

6509609, Jan 21, 2003

Filed:

Jun 18, 2001

Appl. No.:

09/884345

Inventors:

Yaohui Zhang - Los Angeles CA
Kuntal Joardar - Chandler AZ
Daniel Thanh-Khac Pham - Austin TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2978

US Classification:

257330, 257369, 257384, 257407, 257412, 257476

Abstract:

A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 10 cm. A grooved channel is formed in a first surface of the substrate. A first metal silicide material is formed in a first side of the grooved channel, forming a source region, and a second metal silicide material is formed on a second side of the grooved channel, forming a drain region. A metal gate is formed in the grooved channel. The grooved structure allows the off-state current to be reduced to less than 50 pA/m. Further, the feature size can be scaled down to 10 nm without strong short-channel effects (DIBL0. 063) and the gate delay (CV/I) is reduced to 2. 4 ps.