- Armonk NY, US Domingo A. Ferrer - Fishkill NY, US Filippos Papadatos - Wappingers Falls NY, US Daniel P. Stambaugh - Rhinebeck NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/3065 H01L 21/768 H01L 29/66
US Classification:
438586, 438637, 438669
Abstract:
Embodiments of present invention provide a method of forming semiconductor devices. The method includes creating an opening in a semiconductor structure; depositing a first layer of metal inside the opening with the first layer of metal partially filling up the opening; modifying a top surface of the first layer of metal in an etching process; passivating the modified top surface of the first layer of metal to form a passivation layer; and depositing a second layer of metal directly on top of the passivation layer.