Danielle D Thomas

US Patent:

6423995, Jul 23, 2002

Filed:

Jul 26, 1999

Appl. No.:

09/360839

Inventors:

Danielle A. Thomas - Dallas TX

Assignee:

STMicroelectronics, Inc. - Carrollton TX

International Classification:

H01L 27108

US Classification:

257296, 257355, 257414, 257758

Abstract:

In capacitive sensor circuits where physical contact is required and excess pressure may be inadvertently applied to the sensor surface, aluminum is not sufficiently hard to provide âscratchâ protection and may delaminate, causing circuit failure, even if passivation integrity remains intact. Because hard passivation layers alone provide insufficient scratch resistance, at least the capacitive electrodes and preferably all metallization levels within the sensor circuit in the region of the capacitive electrodes between the surface and the active regions of the substrate are formed of a conductive material having a hardness greater than that of aluminum. The selected conductive material preferably has a hardness which is at least as great as the lowest hardness for any interlevel dielectric or passivation material employed. The selected conductive material is employed for each metallization level between the surface and the active regions, including contacts and vias, landing pads, interconnects, capacitive electrodes, and electrostatic discharge protection lines. Tungsten is a suitable conductive material, for which existing processes may be substituted in place of aluminum metallization processes.

US Patent:

6440814, Aug 27, 2002

Filed:

Dec 30, 1998

Appl. No.:

09/223629

Inventors:

Arnaud Yves Lepert - Lafayette CA
Danielle A. Thomas - Dallas TX

Assignee:

STMicroelectronics, Inc. - Carrollton TX

International Classification:

H01L 2120

US Classification:

438393, 369126

Abstract:

A structure and method is disclosed for dissipating electrostatic charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry, and a conductive layer and passivation layers disposed over the underlying dielectric layer wherein the conductive layer diffuses electrostatic charges at the surface of the integrated circuit.

US Patent:

6448103, Sep 10, 2002

Filed:

May 30, 2001

Appl. No.:

09/870259

Inventors:

Danielle A. Thomas - Dallas TX

Assignee:

STMicroelectronics, Inc. - Carrollton TX

International Classification:

H01L 2100

US Classification:

438 52, 438 50, 438 51, 438 53, 438 54

Abstract:

A cantilevered beam is formed over a cavity to an accurate length by isotropically etching a fast-etching material, such as hydrogen silisquioxane, out of the cavity. The cavity is initially defined within a slow-etching material. The selectivity of the etch rates of the material within the cavity relative to the material defining the walls of the cavity permits accurate control of the length of the free end of the cantilevered beam. The resonant frequency of the cantilevered beam can be tuned to a narrow predetermined range by laser trimming.

US Patent:

6472246, Oct 29, 2002

Filed:

Dec 28, 1999

Appl. No.:

09/473365

Inventors:

Danielle A. Thomas - Dallas TX
Frank Randolph Bryant - Denton TX

Assignee:

STMicroelectronics, Inc. - Carrollton TX

International Classification:

H01L 2100

US Classification:

438 64, 438953, 438958, 257659, 257660

Abstract:

A structure and method for creating an integrated circuit passivation ( ) comprising, a circuit ( ), a dielectric ( ), and metal plates ( ) over which an insulating layer ( ) is disposed that electrically and hermetically isolates the circuit ( ), and a discharge layer ( ) that is deposited to form a passivation ( ) that protects the circuit ( ) from electrostatic discharges caused by, e. g. , a finger, is disclosed.

US Patent:

6478976, Nov 12, 2002

Filed:

Dec 30, 1998

Appl. No.:

09/224815

Inventors:

Arnaud Yves Lepert - Lafayette CA
Danielle A. Thomas - Dallas TX

Assignee:

STMicroelectronics, Inc. - Carrollton TX

International Classification:

H01L 2100

US Classification:

216 18, 216 13, 216 17, 216 79, 438720

Abstract:

A structure and method for creating a contact between a conductive layer and a pad for dissipating electrostatic charges comprising the steps of, forming a pad and a composite insulating layer between and over conductive plates on a substrate, wherein the insulating layer isolates and protects the conductive plates and pad from damage, the insulating layer comprising a dielectric region underlying a conductive layer. A passivation layer is formed over at least a portion of the conductive layer and a photoresist is patterned over at least a portion of the passivation. An opening is etched through the passivation and the insulating layers, wherein the photoresist and the conductive layer serve as masks. Finally, a conductive material is deposited in the opening to form an electrical contact between the pad and the conductive layer.

US Patent:

6501142, Dec 31, 2002

Filed:

Apr 25, 2001

Appl. No.:

09/843260

Inventors:

Danielle A. Thomas - Dallas TX
Ming Fang - Plano TX

Assignee:

STMicroelectronics, Inc. - Carrollton TX

International Classification:

H01L 2714

US Classification:

257414, 257415, 257532, 382124

Abstract:

A structure and method for dissipating charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry a gap being formed conformally between adjacent plates and a topographic discharge grid over the underlying dielectric layer and wherein the topographic discharge grid fills at least a portion of the gap between the plates over the dielectric layer and diffuses electrostatic charges at the surface of the integrated circuit.

US Patent:

6515488, Feb 4, 2003

Filed:

May 7, 2001

Appl. No.:

09/850244

Inventors:

Danielle A. Thomas - Dallas TX

Assignee:

STMicroelectronics, Inc. - Carrollton TX

International Classification:

G01R 2726

US Classification:

324662

Abstract:

A fingerprint detector having a smooth sensor surface for contact with a fingerprint includes capacitive sensor plates defining an array of sensor cells below the sensor surface and tungsten ESD protection grid lines surrounding each sensor cell. The sensor surface is defined by silicon carbide and includes silicon oxide filling cavities in the silicon carbide. The cavities inherently result from processing steps, including removal of the tungsten atop the silicon carbide that is used to define the grid lines. Filling the cavities with oxide and smoothing the surface using chemical mechanical polishing provides a scratch-resistant surface and improves the sensitivity of the capacitive sensor cells.

US Patent:

6555888, Apr 29, 2003

Filed:

Jul 1, 2002

Appl. No.:

10/186801

Inventors:

Arnaud Yves Lepert - Lafayette CA
Danielle A. Thomas - Dallas TX

Assignee:

STMicroelectronics, Inc. - Carrollton TX

International Classification:

H01L 2982

US Classification:

257415, 341 33, 382124, 3612831

Abstract:

A structure and method is disclosed for dissipating electrostatic charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry, and a conductive layer and passivation layers disposed over the underlying dielectric layer wherein the conductive layer diffuses electrostatic charges at the surface of the integrated circuit.