Darren M Hansen

US Patent:

20040081214, Apr 29, 2004

Filed:

Oct 24, 2002

Appl. No.:

10/279744

Inventors:

Luke Mawst - Sun Prairie WI, US
Nelson Tansu - Madison WI, US
Michael Nesnidal - Oregon WI, US
Steven Meassick - Mt. Horeb WI, US
Eric Stiers - LaCrosse WI, US
Darren Hansen - Madison WI, US
Troy Goodnough - Madison WI, US

International Classification:

H01S005/00

US Classification:

372/045000

Abstract:

An edge-emitting semiconductor laser incorporating a narrow waveguide design is disclosed. The narrow waveguide expands the lateral mode size, creates a large modal spot size, and insures higher-order modes are beyond cutoff. Separate current confinement allows the current injection region to match the mode size. The resulting device exhibits single-mode operation with a large spot-size to high output powers.

US Patent:

20230032719, Feb 2, 2023

Filed:

Feb 11, 2021

Appl. No.:

17/787455

Inventors:

- Midland MI, US
- Collegeville PA, US
Darren Hansen - Auburn MI, US

International Classification:

C08L 83/04
C08J 3/22

Abstract:

A composition contains the following components: (a) 15 to 49.8 volume-percent of a first polysiloxane that is has a viscosity in a range of 50 centiStokes to 550 Stokes as determined according to ASTM D4283-98; (b) 0.2 to 5 volume-percent of an organoclay; (c) 50-74 volume-percent roundish or crushed thermally conductive fillers including: (i) 5 to 15 volume-percent small thermally conductive fillers having a median particle size in a range of 0.1 to 1.0 micrometers; (ii) 10 to 25 volume-percent medium thermally conductive fillers having a median particle size in a range of 1.1 to 5.0 micrometers; (iii) 25 to 50 volume-percent large thermally conductive fillers having a median particle size in a range of 5.1 to 50 micrometers; and (d) 0 to 5 volume-percent of an alkoxy functional linear polysiloxane different from the first polysiloxane and/or an alkoxy functional linear silane; where volume-percent values are relative to composition volume.

US Patent:

20210403716, Dec 30, 2021

Filed:

Dec 29, 2018

Appl. No.:

17/281484

Inventors:

- Midland MI, US
Yan Zheng - Shanghai, CN
Hongyu Chen - Shanghai, CN
Chen Chen - Shanghai, CN
Dorab Bhagwagar - Saginaw MI, US
Darren Hansen - Auburn MI, US

International Classification:

C08L 83/00
C08K 3/22
C08K 5/3417

Abstract:

A highly thermally conductive composition is provided, such composition comprising: (A) An organopolysiloxane composition; (B) a filler treating agent; (C) a thermal stabilizer; and (D) thermally conductive filler mixture, comprising: (D-1) a small-particulate thermally conductive filler having a mean size of up to 1 μm, (D-2) middle-sized filler having a mean size of from 1 to 10 μm, (D-3) large filler having a mean size of larger than 30 μm and comprising at least magnesium oxide.

US Patent:

20210332280, Oct 28, 2021

Filed:

Nov 7, 2018

Appl. No.:

17/268143

Inventors:

- Midland MI, US
Yan Zheng - Shanghai, CN
Hongyu Chen - Shanghai, CN
Chen Chen - Shanghai, CN
Dorab Bhagwagar - Saginaw MI, US
Darren Hansen - Auburn MI, US

International Classification:

C09K 5/14
C08G 77/20
C08K 13/04
C08K 5/3417
C08K 7/18
C08K 3/22
C08K 3/28
C08K 3/38
F28F 23/00

Abstract:

A highly thermally conductive composition is provided, such composition comprising: (A) An organopolysiloxane composition; (B) a filler treating agent; (C) a thermal stabilizer; and (D) thermally conductive filler mixture, comprising: (D-1) a small-particulate thermally conductive filler having a mean size of up to 3 μm, (D-2) spherical aluminum nitride having a mean size of from 50 to 150 μm, (D-3) boron nitride having a mean size of from 20 to 200 μm.

US Patent:

20170137963, May 18, 2017

Filed:

Jan 30, 2017

Appl. No.:

15/419993

Inventors:

- Midland MI, US
Roman Drachev - Midland MI, US
Darren Hansen - Midland MI, US
Edward Sanchez - Midland MI, US

International Classification:

C30B 23/00
C30B 23/06
C23C 14/54
C23C 14/06
C23C 14/24
C23C 14/26
C30B 23/02
C30B 29/36

Abstract:

A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

US Patent:

20140220296, Aug 7, 2014

Filed:

Oct 18, 2013

Appl. No.:

14/058167

Inventors:

- Midland MI, US
Roman Drachev - Midland MI, US
Darren Hansen - Midland MI, US
Edward Sanchez - Midland MI, US

Assignee:

Dow Corning Corporation - Midland MI

International Classification:

C30B 23/02
C30B 29/36
C30B 23/06

US Classification:

428131, 117109, 118726, 423345

Abstract:

A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.