Darryl Kevin Angelo

US Patent:

6458251, Oct 1, 2002

Filed:

Nov 16, 1999

Appl. No.:

09/440679

Inventors:

Arvind Sundarrajan - Santa Clara CA
Darryl Angelo - Sunnyvale CA
Peijun Ding - San Jose CA
Barry Chin - Saratoga CA
Imran Hasim - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1432

US Classification:

20419212, 20419215, 20419213, 20429806, 20429807

Abstract:

A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

US Patent:

6607640, Aug 19, 2003

Filed:

Mar 29, 2000

Appl. No.:

09/538343

Inventors:

Arvind Sundarrajan - Santa Clara CA
Darryl Angelo - Santa Clara CA
Peijun Ding - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1434

US Classification:

20419215

Abstract:

A method of improving the temperature control of a clamped substrate mounted on a substrate support that is biased, the substrate support having a passage therethrough to permit a flow of backside gas for heating or cooling the substrate, whereby the pressure of the backside gas is maintained at at least 15 torr. A high gas pressure improves the thickness uniformity of processing across the substrate. For plasma deposition of sputtered seed layers, the morphology of the seed layer is improved near the edge of the substrate and the uniformity of the layer across the substrate is also improved.

US Patent:

20030066747, Apr 10, 2003

Filed:

Sep 30, 2002

Appl. No.:

10/262652

Inventors:

Arvind Sundarrajan - Santa Clara CA, US
Darryl Angelo - Sunnyvale CA, US
Barry Chin - Saratoga CA, US
Imran Hasim - San Jose CA, US

Assignee:

Applied Materials, Inc.

International Classification:

C23C014/32
C23C014/00

US Classification:

204/192120, 204/192150, 204/192130, 204/298060, 204/298070

Abstract:

A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

US Patent:

20030116427, Jun 26, 2003

Filed:

Jul 25, 2002

Appl. No.:

10/202778

Inventors:

Peijun Ding - San Jose CA, US
Zheng Xu - Foster City CA, US
Roderick Mosely - Pleasanton CA, US
Suraj Rengarajan - San Jose CA, US
Nirmalya Maity - Los Altos CA, US
Daniel Carl - Pleasanton CA, US
Barry Chin - Saratoga CA, US
Paul Smith - San Jose CA, US
Darryl Angelo - Sunnyvale CA, US
Anish Tolia - San Jose CA, US
Jianming Fu - Palo Alto CA, US
Fusen Chen - Cupertino CA, US
Praburam Gopalraja - San Jose CA, US
Xianmin Tang - San Jose CA, US
John Forster - San Francisco CA, US

Assignee:

Applied Materials, Inc.

International Classification:

C23C014/32
C23C014/34

US Classification:

204/192170, 204/192120, 204/192150, 204/298060, 204/298080, 204/298190, 204/298200, 204/192110, 204/298250

Abstract:

A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

US Patent:

20030216035, Nov 20, 2003

Filed:

May 14, 2003

Appl. No.:

10/439021

Inventors:

Suraj Rengarajan - San Jose CA, US
Michael Miller - Sunnyvale CA, US
Darryl Angelo - Sunnyvale CA, US
Nirmalya Maity - San Jose CA, US
Peijun Ding - San Jose CA, US

Assignee:

Applied Materials, Inc.

International Classification:

C23C014/00
C23C014/32
H01L021/4763

US Classification:

438/637000, 204/192170

Abstract:

A physical vapor deposition chamber is employed to sputter-deposit a layer of material, such as a tantalum or tantalum nitride barrier layer, in a via formed on a semiconductor substrate. After the sputter-deposition step, a second processing step is performed in which material from the barrier layer is back-sputtered from the bottom wall of the via. The second step is performed at a high pedestal bias and with substantial power applied to the sputtering target. The power applied to the sputtering target in the second step may be at a higher level than the power applied to the sputtering target in the first step. Numerous other aspects are provided.

US Patent:

20050252454, Nov 17, 2005

Filed:

Feb 23, 2005

Appl. No.:

11/065702

Inventors:

Vijay Parkhe - San Jose CA, US
Matthew Leopold - Ithaca NY, US
Timothy Ronan - San Jose CA, US
Todd Martin - Mountain View CA, US
Edward Ng - San Jose CA, US
Nitin Khurana - Milpitas CA, US
Song-Moon Suh - Sunnyvale CA, US
Richard Fay - San Jose CA, US
Christopher Hagerty - Aptos CA, US
Michael Rice - Pleasanton CA, US
Darryl Angelo - Sunnyvale CA, US
Kurt Ahman - San Jose CA, US
Matthew Tsai - Cupertino CA, US
Steve Sansoni - Livermore CA, US

International Classification:

C23C016/00

US Classification:

118729000

Abstract:

A lifting assembly can lift a substrate from a substrate support and transport the substrate. The lift assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The lifting assembly and other process chamber components can have a diamond-like coating having interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having a coefficient of friction of less than about 0.3, a hardness of at least about 8 GPa, and a metal concentration level of less than about 5×10atoms/cmof metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.

US Patent:

20080105201, May 8, 2008

Filed:

Oct 29, 2007

Appl. No.:

11/927120

Inventors:

TIMOTHY RONAN - San Jose CA, US
Yuanhong Guo - San Jose CA, US
Robert Decottignies - Redwood City CA, US
Todd W. Martin - Mountain View CA, US
Darryl K. Angelo - Sunnyvale CA, US
Song-Moon Suh - San Jose CA, US
Nitin Khurana - Milpitas CA, US
Edward Ng - San Jose CA, US

International Classification:

B05C 13/00

US Classification:

118500

Abstract:

A support component comprises a support structure having a support surface with one or more quartz contact tips. In one version, the support component comprises a robot blade capable of transferring a substrate into and out of a chamber. The robot blade comprises a plate having a plurality of raised mesas, each raised mesa comprising a quartz contact tip which minimizes contact with the substrate thereby generating fewer contaminant particles during substrate transportation. Other versions of the support component include a heat exchange pedestal, lift pin assembly, and lifting fin assembly.

US Patent:

6235163, May 22, 2001

Filed:

Jul 9, 1999

Appl. No.:

9/350556

Inventors:

Darryl Angelo - Sunnyvale CA
Arvind Sundarrajan - Santa Clara CA
Peijun Ding - San Jose CA
James H. Tsung - San Jose CA
Ilyoung R. Hong - San Jose CA
Barry Chin - Saratoga CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1434

US Classification:

20419212

Abstract:

An improved system for performing plasma enhanced PVD of copper, aluminum, tungsten or other metallic material is disclosed. The system has markedly improved performance in the critical area of unwanted in-film particle deposits. The improved performance is provided by lowering the operating temperature of the RF coil used in the plasma enhanced PVD system and by carefully smoothing the outer surface of the RF coil. High conductivity material in the coil supports, increased contact area between the coil supports and the RF coil, and the use of active cooling of the coil further enhance the performance of the system.