Daryl Stough

US Patent:

56628790, Sep 2, 1997

Filed:

Apr 29, 1996

Appl. No.:

8/639642

Inventors:

Karl F. Schoch - Pittsburgh PA
Theodore R. Vasilow - Irwin PA
Daryl V. Stough - Huntingdon PA

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

C01G 4900

US Classification:

423594

Abstract:

A method for precipitating ferrite at room temperature which involves dissolving metal salts in deaerated water, using a base solution to precipitate metal hydroxides, adding an oxidizing agent that has a standard reduction potential greater than 1. 229 V versus standard hydrogen electrode. The oxidizing agent further preferably has a standard reduction potential less than 1. 8 V versus standard hydrogen electrode. The oxidizing agent is preferably one of hydrogen peroxide, ammonium peroxydisulfate, ozone, nitrous acid, NO, and N. sub. 2 O. The base is preferably ammonium hydroxide.

US Patent:

53390385, Aug 16, 1994

Filed:

Jul 6, 1992

Appl. No.:

7/910854

Inventors:

Robert A. Boenning - Timonium MD
Karl F. Schoch - Penn Hills PA
Daryl V. Stough - North Huntingdon PA
Francis W. Navish - East Pittsburgh PA

Assignee:

Westinghouse Electric Corporation - Pittsburgh PA

International Classification:

G01R 3102

US Classification:

324539

Abstract:

An assembly for protecting a conduit having a core and an axial length, which length is susceptible to being pinched by a structure is disclosed. The conduit includes an insulating coating in surrounding relationship about the core, with the assembly including a semiconductive layer in surrounding relationship about the insulating coating, and a switching layer in surrounding relationship about the semiconductive layer. The semiconductive layer being formed from partially vulcanized ethylene propylene rubber including particles of a conductive element in the form of carbon black, silver, nickel, aluminum or the like. The switching layer is non-conductive in its unstressed state and conductive when pinched such that the switching layer completes a current flow path between the semiconductive layer and either a grounded structure or another conductive layer, which condition may then be detected.