David K Beach

US Patent:

6440211, Aug 27, 2002

Filed:

Sep 30, 1999

Appl. No.:

09/409120

Inventors:

David B. Beach - Knoxville TN
Jonathan S. Morrell - Knoxville TN
Mariappan Paranthaman - Knoxville TN
Thomas Chirayil - Knoxville TN
Eliot D. Specht - Knoxville TN
Amit Goyal - Knoxville TN

Assignee:

UT-Battelle, LLC - Oak Ridge TN

International Classification:

C30B 2802

US Classification:

117 9, 4271263, 4271264, 4273764, 4274192, 4274193, 428469, 428701, 428702, 428699

Abstract:

A laminate article comprises a substrate and a biaxially textured (RE RE ) O buffer layer over the substrate, wherein 0x1 and RE and RE are each selected from the group consisting of Nd, Sm, Eu, Ho, Er, Lu, Gd, Tb, Dy, Tm, and Yb. The (RE RE ) O buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE RE ) O buffer layer. A layer of CeO between the YBCO layer and the (RE RE ) O buffer can also be include. Further included can be a layer of YSZ between the CeO layer and the (RE RE ) O buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

US Patent:

6663976, Dec 16, 2003

Filed:

Jun 20, 2002

Appl. No.:

10/175684

Inventors:

David B. Beach - Knoxville TN
Jonathan S. Morrell - Knoxville TN
Mariappan Paranthaman - Knoxville TN
Thomas Chirayil - Knoxville TN
Eliot D. Specht - Knoxville TN
Amit Goyal - Knoxville TN

Assignee:

UT-Battelle, LLC - Oak Ridge TN

International Classification:

B32B 1504

US Classification:

428469, 428472, 428689, 428697, 428699, 428701, 428702

Abstract:

A laminate article comprises a substrate and a biaxially textured (RE RE ) O buffer layer over the substrate, wherein 0x1 and RE and RE are each selected from the group consisting of Nd, Sm, Eu, Ho, Er, Lu, Gd, Tb, Dy, Tm, and Yb. The (RE RE ) O buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE RE ) O buffer layer. A layer of CeO between the YBCO layer and the (RE RE ) O buffer can also be include. Further included can be a layer of YSZ between the CeO layer and the (R RE ) O buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

US Patent:

62354027, May 22, 2001

Filed:

Feb 11, 1999

Appl. No.:

9/248300

Inventors:

Shara S. Shoup - Woodstock GA
David B. Beach - Knoxville TN
Donald M. Kroeger - Knoxville TN
Amit Goyal - Knoxville TN

Assignee:

UT-Battelle, LLC - Oak Ridge TN

International Classification:

B32B 1504

US Classification:

428472

Abstract:

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

US Patent:

54615364, Oct 24, 1995

Filed:

Nov 29, 1994

Appl. No.:

8/346436

Inventors:

David B. Beach - Knoxville TN
Alfred Grill - White Plains NY
Christopher J. Smart - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01G 438

US Classification:

361328

Abstract:

A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.

US Patent:

54160421, May 16, 1995

Filed:

Jun 9, 1994

Appl. No.:

8/257396

Inventors:

David B. Beach - Knoxville TN
Alfred Grill - White Plains NY
Christopher J. Smart - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2170

US Classification:

437 60

Abstract:

A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.

US Patent:

60773448, Jun 20, 2000

Filed:

Sep 2, 1997

Appl. No.:

8/922173

Inventors:

Shara S. Shoup - Woodstock GA
David B. Beach - Knoxville TN
Donald M. Kroeger - Knoxville TN
Amit Goyal - Knoxville TN

Assignee:

Lockheed Martin Energy Research Corporation - Oak Ridge TN

International Classification:

C30B 102
B05D 302
B05D 136

US Classification:

117 9

Abstract:

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.