David L Chen

US Patent:

6363419, Mar 26, 2002

Filed:

Apr 5, 1999

Appl. No.:

09/286499

Inventors:

Bruce K. Martin, Jr. - Palo Alto CA
David A. Chen - San Carlos CA
Lawrence M. Stein - San Jose CA
Bruce V. Schwartz - San Mateo CA
Gregory A. Heumann - San Mateo CA

Assignee:

Openwave Systems Inc. - Redwood City CA

International Classification:

G06F 1300

US Classification:

709219, 709313, 709328

Abstract:

A system for displaying idle content information on wireless computing devices during idle times is disclosed. The idle content information displayed on the wireless computing device might display the network operators customer support telephone number or advertisements. In one embodiment, a browser program within the wireless computing device is used to display other idle content information to the user during such time when the wireless computing device is idle. The browser program may be modified to support looping content, interaction with idle displays, automatic scrolling, and automatic updating of idle content information.

US Patent:

6562215, May 13, 2003

Filed:

Aug 7, 2000

Appl. No.:

09/633420

Inventors:

Charles Scott Nelson - Clio MI
David K. Chen - Rochester Hills MI
Lora B. Younkman - Grand Blanc MI
Raymond L. Bloink - Swartz Creek MI
Kaius K. Polikarpus - Grand Blanc MI
Walter T. Symons - Grand Blanc MI

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

G01N 27407

US Classification:

204784, 204424, 204426

Abstract:

Disclosed herein is a planar exhaust gas sensor for sensing the partial pressure of a gas in an exhaust. The sensing element has a modified, non-rectangular overall geometry. A terminal end of the element, onto which external sensor circuits can be attached, has a larger width than a sensor end of the element, in which is located the sensing cell. The reduced size of the sensor end of the element relative allows for more rapid attainment of operating temperature and lower energy consumption.

US Patent:

6693043, Feb 17, 2004

Filed:

Sep 20, 2002

Appl. No.:

10/251178

Inventors:

Senzi Li - San Jose CA
Helmuth Treichel - Milpitas CA
Kirk Ostrowski - San Jose CA
Chevan Goonetilleke - Hayward CA
Jim Su - Cupertino CA
David L. Chen - San Jose CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21302

US Classification:

438725, 438706

Abstract:

A unique photoresist strip sequence using a downstream plasma system is described. The sequence can include a RF directional plasma alone, downstream plasma alone or combine both RF plasma and downstream plasma together. The process sequence can be a single step or multiple steps, which produce high strip rates while maintaining the dielectric properties of the film. The process can be an oxidizing process carried out at low temperature and low pressure, which reduces the reactivity of the oxygen with the low-k film. Furthermore, by adding a small percentage of an additive gas, such as a fluorine-containing gas, to the plasma, the inorganic residues from the strip process are removed, leaving a clean film cleared of photoresist and residue.

US Patent:

6781745, Aug 24, 2004

Filed:

Sep 11, 2002

Appl. No.:

10/242335

Inventors:

Jerry Chung - Mountain View CA
David Chen - Buena Park CA

Assignee:

Sipix Imaging, Inc. - Milpitas CA

International Classification:

G02B 2600

US Classification:

359296, 359254, 359316, 345107, 345108, 345111, 430 35, 252572

Abstract:

An electrophoretic display comprising at least one in-plane gating electrode. The gating electrode(s) provide a gating effect, which raises the effective threshold voltage to prevent the undesired movement of the charged particles in the cells. The design of the invention can be manufactured using low cost materials by efficient processes.

US Patent:

6806995, Oct 19, 2004

Filed:

Oct 28, 2002

Appl. No.:

10/282444

Inventors:

Jerry Chung - Mountain View CA
David Chen - Buena Park CA

Assignee:

SIPIX Imaging, Inc. - Milpitas CA

International Classification:

G02B 2600

US Classification:

359296, 359271

Abstract:

An electrophoretic display having at least one holding electrode is disclosed. The display comprises a plurality of electrophoretic cells filled with charged particles dispersed in a dielectric solvent. Each said cell is positioned between a top electrode layer and a bottom electrode layer. The top electrode layer comprises at least one driving electrode positioned over more than one cell. The bottom electrode layer comprises at least one driving electrode positioned under more than one cell. The display further comprises a holding electrode located in the bottom electrode layer. The display may further comprise a colored background located under and visible through the bottom electrode layer.

US Patent:

6855225, Feb 15, 2005

Filed:

Jan 24, 2003

Appl. No.:

10/351032

Inventors:

David Lee Chen - San Jose CA, US
Vincent Bernard Decaux - San Francisco CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

C23C016/00
C23F001/00

US Classification:

15634548, 118723 I, 31511151

Abstract:

A plasma source for use in, for example, semiconductor processing contains a radio-frequency generator, an impedance matching network, and a coil that encloses a tube. The coil is bifilar, i. e. , the turns of one are interlaced with the turns of a second winding. The matching network supplies only a single coil in the plasma source, unlike conventional arrangements wherein a single matching network supplies multiple coils in the plasma source.

US Patent:

6867086, Mar 15, 2005

Filed:

Mar 13, 2003

Appl. No.:

10/389164

Inventors:

David Chen - East Palo Alto CA, US
Vishal Gauri - San Jose CA, US
George D. Papasouliotis - Cupertino CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L021/338
H01L021/336
H01L021/76
H01L021/31
H01L021/439

US Classification:

438219, 438295, 438404, 438787, 438788

Abstract:

High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0. 13 micron, for example 0. 1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. This deposition part of the process may involve the use of any suitable high density plasma chemical vapor deposition (HDP CVD) chemistry. The etch back part of the process involves an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality gap fill operations.

US Patent:

6957564, Oct 25, 2005

Filed:

Feb 25, 2003

Appl. No.:

10/373491

Inventors:

Charles Scott Nelson - Clio MI, US
Mark R. McClanahan - Goodrich MI, US
David K. Chen - Rochester Hills MI, US
Russell H. Bosch - Gaines MI, US

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

G01H027/00

US Classification:

73 2331, 374144

Abstract:

Disclosed herein is an impact absorber for an exhaust sensor. The impact absorber comprises a collar of deformable material disposed around a housing of the exhaust sensor. The collar extends radially outward from the housing. The collar may be formed from a material selected to degrade at exhaust temperature, or the collar may be formed from a material that provides radiation shielding to a portion of the sensor after installation. The collar may be disposed around a sealing gasket. A wall may be disposed around at least a portion of a perimeter of the collar, the wall being spaced apart from a plurality of facets formed on the housing to form a recess for receiving a socket wrench tool.

Address:

588 Yurok Ct, San Jose, CA 95123

Phone:

(408)3651585

VIN:

JTHBB1BA9B2043627

Make:

LEXUS

Model:

HS 250H

Year:

2011