David A Eldridge

US Patent:

20110259366, Oct 27, 2011

Filed:

Feb 11, 2009

Appl. No.:

12/867245

Inventors:

Joseph D. Sweeney - Winsted CT, US
Sharad N. Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Robert Kaim - Brookline MA, US
David Eldridge - Liberty Hill TX, US
Steven Sergi - Woodbury CT, US
Lin Feng - Danbury CT, US
Steven E. Bishop - Corrales NM, US
W. Karl Olander - Indian Shores FL, US
Ying Tang - Danbury CT, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

B08B 7/00
H01L 21/265
B08B 5/00

US Classification:

134 10, 134 221, 134 2211, 134 2219, 134 2213, 134 23, 134 18

Abstract:

Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

US Patent:

20120058252, Mar 8, 2012

Filed:

Aug 12, 2009

Appl. No.:

13/201188

Inventors:

Joseph D. Sweeney - Winsted CT, US
Sharad N. Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Robert Kaim - Brookline MA, US
David Eldridge - Liberty Hill TX, US
Lin Feng - Orange CT, US
Steven E. Bishop - Corrales NM, US
W. Karl Olander - Indian Shores FL, US
Ying Tang - Danbury CT, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

B08B 5/00
B05D 3/10
B05D 5/12

US Classification:

427 58, 134 31

Abstract:

Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.