David James Eldridge

US Patent:

8603252, Dec 10, 2013

Filed:

Apr 26, 2007

Appl. No.:

12/298727

Inventors:

Frank Dimeo - Falls Church VA, US
James Dietz - Allison Park PA, US
W. Karl Olander - Indian Shores FL, US
Robert Kaim - Brookline MA, US
Steven Bishop - Corrales NM, US
Jeffrey W. Neuner - Bethel CT, US
Jose Arno - Brookfield CT, US
Paul J. Marganski - Seymore CT, US
Joseph D. Sweeney - New Milford CT, US
David Eldridge - Liberty Hill TX, US
Sharad Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Gregory T. Stauf - Branchburg NJ, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

B08B 7/00

US Classification:

134 11, 134 221

Abstract:

A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF, XeF, XeF, NF, IF, IF, SF, CF, F, CF, KrF, Cl, HCl, ClF, ClO, NF, NF, NF, NFH, NHF, HOBr, Br, CF, CF, CF, CHF, CHF, CHF, COF, HF, CHF, CHF, CHF, CHF, CHF, CF, and organochlorides such as COCl, CCl, CHCl, CHCland CHCl.

US Patent:

20110259366, Oct 27, 2011

Filed:

Feb 11, 2009

Appl. No.:

12/867245

Inventors:

Joseph D. Sweeney - Winsted CT, US
Sharad N. Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Robert Kaim - Brookline MA, US
David Eldridge - Liberty Hill TX, US
Steven Sergi - Woodbury CT, US
Lin Feng - Danbury CT, US
Steven E. Bishop - Corrales NM, US
W. Karl Olander - Indian Shores FL, US
Ying Tang - Danbury CT, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

B08B 7/00
H01L 21/265
B08B 5/00

US Classification:

134 10, 134 221, 134 2211, 134 2219, 134 2213, 134 23, 134 18

Abstract:

Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

US Patent:

20120058252, Mar 8, 2012

Filed:

Aug 12, 2009

Appl. No.:

13/201188

Inventors:

Joseph D. Sweeney - Winsted CT, US
Sharad N. Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Robert Kaim - Brookline MA, US
David Eldridge - Liberty Hill TX, US
Lin Feng - Orange CT, US
Steven E. Bishop - Corrales NM, US
W. Karl Olander - Indian Shores FL, US
Ying Tang - Danbury CT, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

B08B 5/00
B05D 3/10
B05D 5/12

US Classification:

427 58, 134 31

Abstract:

Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

US Patent:

20200340110, Oct 29, 2020

Filed:

Apr 23, 2020

Appl. No.:

16/856687

Inventors:

- Billerica MA, US
Scott L. BATTLE - Cedar Park TX, US
David J. ELDRIDGE - Liberty Hill TX, US
John N. GREGG - Marble Falls TX, US
Jacob THOMAS - Leander TX, US
Manuel F. GONZALES - Fort Worth TX, US
Kenney R. JORDAN - Denton TX, US
Benjamin H. OLSON - Round Rock TX, US

International Classification:

C23C 16/458
C23C 14/18

Abstract:

A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.

US Patent:

20180282863, Oct 4, 2018

Filed:

Oct 6, 2016

Appl. No.:

15/766251

Inventors:

- Billerica MA, US
Yuqi Li - Danbury CT, US
David James Eldridge - Liberty Hill TX, US
Robert L. Wright - Newtown CT, US

International Classification:

C23C 16/448
B22F 3/02
C09D 5/00
C09D 1/00
C04B 35/515
C04B 35/63
C04B 35/634

Abstract:

A solid delivery precursor is described, which is useful for volatilization to generate precursor vapor for a vapor deposition process. The solid delivery precursor comprises solid bodies of compacted particulate precursor, e.g., in a form such as pellets, platelets, tablets, beads, discs, or monoliths. When utilized in a vapor deposition process such as chemical vapor deposition, pulsed chemical vapor deposition, or atomic layer deposition, the solid delivery precursor in the form of solid bodies of compacted particulate precursor provide substantially increased flux of precursor vapor when subjected to volatilization conditions, in relation to the particulate precursor. As a result, vapor deposition process operation can be carried out in shorter periods of time, thereby achieving increased manufacturing rates of plays, solar panels, LEDs, optical coatings, and the like.