David M O'Meara from 82 Wedgemere Rd, Stamford, CT 06905, age 49

Us Patents

Interfacial Oxidation Process For High-K Gate Dielectric Process Integration
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US Patent:

6974779, Dec 13, 2005
Filed:

Sep 16, 2003
Appl. No.:

10/662875
Inventors:

David L O'Meara - Poughkeepsie NY, US
Cory Wajda - Mesa AZ, US
Tsuyoshi Takahashi - Nirasaki, JP
Alessandro Callegari - Yorktown Heights NY, US
Kristen Scheer - Milton NY, US
Sufi Zafar - Briarcliff Manor NY, US
Paul Jamison - Hopewell Junction NY, US
Assignee:

Tokyo Electron Limited - Tokyo
International Business Machines Corporation - Armonk NY
International Classification:

H01L021/469
US Classification:

438769, 438770
Abstract:

A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

Method Of Forming Uniform Ultra-Thin Oxynitride Layers
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US Patent:

7202186, Apr 10, 2007
Filed:

Jul 31, 2003
Appl. No.:

10/630970
Inventors:

David L O'Meara - Poughkeepsie NY, US
Cory Wajda - Mesa AZ, US
Anthony Dip - Cedar Creek TX, US
Michael Toeller - Austin TX, US
Toshihara Furukawa - Essex Junction VT, US
Kristen Scheer - Milton NY, US
Alessandro Callegari - Yorktown Heights NY, US
Fred Buehrer - Poughquag NY, US
Sufi Zafar - Briarcliff Manor NY, US
Evgeni Gousev - Mahopac NY, US
Anthony Chou - Beacon NY, US
Paul Higgins - Harriman NY, US
Assignee:

Tokyo Electron Limited - Tokyo
International Business Machines Corporation (IBM) - Armonk NY
International Classification:

H01L 21/31
H01L 21/469
US Classification:

438786, 438513, 438775
Abstract:

Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.

Formation Of Ultra-Thin Oxide Layers By Self-Limiting Interfacial Oxidation
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US Patent:

7235440, Jun 26, 2007
Filed:

Jul 31, 2003
Appl. No.:

10/630969
Inventors:

David L O'Meara - Poughkeepsie NY, US
Cory Wajda - Mesa AZ, US
Anthony Dip - Cedar Creek TX, US
Michael Toeller - Austin TX, US
Toshihara Furukawa - Essex Junction VT, US
Kristen Scheer - Milton NY, US
Alessandro Callegari - Yorktown Heights NY, US
Fred Buehrer - Poughquag NY, US
Sufi Zafar - Briarcliff Manor NY, US
Evgeni Gousev - Mahopac NY, US
Anthony Chou - Beacon NY, US
Paul Higgins - Harriman NY, US
Assignee:

Tokyo Electron Limited - Tokyo
International Business Machines Corporation - Armonk NY
International Classification:

H01L 21/8242
US Classification:

438240, 438216, 438287, 438591
Abstract:

Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiOlayers with a thickness of about 15 A, where the thickness of the SiOlayers varies less than about 1 A over the substrates.

Method Of Forming A Gate Stack Containing A Gate Dielectric Layer Having Reduced Metal Content
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US Patent:

7470591, Dec 30, 2008
Filed:

Sep 30, 2005
Appl. No.:

11/239321
Inventors:

David L. O'Meara - Poughkeepsie NY, US
YoungJong Lee - Fishkill NY, US
Cory Wajda - Sand Lake NY, US
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

H01L 21/00
US Classification:

438287, 257E2119
Abstract:

A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.

Method And Processing System For Monitoring Status Of System Components
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US Patent:

7479454, Jan 20, 2009
Filed:

Sep 30, 2003
Appl. No.:

10/674703
Inventors:

David L. O'Meara - Poughkeepsie NY, US
Daniel Craig Burdett - West Park NY, US
Stephen H. Cabral - Pine Plains NY, US
Gert Leusink - Saltpoint NY, US
John William Kostenko - LaGrangeville NY, US
Cory Wajda - Mesa AZ, US
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

H01L 21/302
US Classification:

438689, 216 67
Abstract:

A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

Method And System For Forming An Oxynitride Layer
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US Patent:

7501352, Mar 10, 2009
Filed:

Mar 30, 2005
Appl. No.:

11/093260
Inventors:

Masanobu Igeta - Fishkill NY, US
Cory Wajda - Sand Lake NY, US
David L. O'Meara - Poughkeepsie NY, US
Kristen Scheer - Milton NY, US
Assignee:

Tokyo Electron, Ltd. - Tokyo
International Business Machines Corporation (“IBM”) - Armonk NY
International Classification:

H01L 21/31
US Classification:

438769, 438786, 257E21267
Abstract:

The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.

Method And Control System For Treating A Hafnium-Based Dielectric Processing System
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US Patent:

7509962, Mar 31, 2009
Filed:

Jan 21, 2005
Appl. No.:

11/038129
Inventors:

David L. O'Meara - Poughkeepsie NY, US
Shingo Maku - Kai, JP
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

B08B 6/00
US Classification:

134 11, 134 21, 134 221, 216 37, 216 67, 216 75, 438905
Abstract:

A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

Method For Monitoring Status Of System Components
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US Patent:

8460945, Jun 11, 2013
Filed:

Sep 30, 2003
Appl. No.:

10/673513
Inventors:

David L. O'Meara - Poughkeepsie NY, US
Daniel Craig Burdett - West Park NY, US
Stephen H. Cabral - Pine Plains NY, US
Gert Leusink - Saltpoint NY, US
John William Kostenko - LaGrangeville NY, US
Cory Wajda - Hopewell Junction NY, US
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

H01L 21/00
US Classification:

438 7
Abstract:

A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.