David M Pastor

US Patent:

20180151361, May 31, 2018

Filed:

Nov 29, 2017

Appl. No.:

15/825398

Inventors:

- Cambridge MA, US
Michael J. Aziz - Concord MA, US
Hemant Gandhi - Cambridge MA, US
David Pastor - Cambridge MA, US

International Classification:

H01L 21/02
H01L 21/265
H01L 21/268
H01L 21/324
H01L 29/167
H01L 29/36
H01L 21/67
B23K 26/352
B23K 26/06
B23K 26/0622

Abstract:

In one aspect a method of fabricating an n-doped strained germanium (Ge) film is disclosed, which includes depositing a strained Ge film on an underlying substrate, implanting at least one electron-donating dopant in the Ge film, and exposing the implanted Ge film to one or more laser pulses having a pulsewidth in a range of about 1 ns to about 100 ms so as to generate a substantially crystalline strained Ge film. In some embodiments, the pulses can cause melting followed by substantial recrystallization of at least a portion of the implanted Ge film. In some embodiments, the resultant Ge film can have a thickness in a range of about 10 nm to about 1 microns.