David M Payne

US Patent:

6518168, Feb 11, 2003

Filed:

Nov 2, 1998

Appl. No.:

09/029317

Inventors:

Paul G. Clem - Albuquerque NM
Milan Mrksich - Chicago IL
Ralph G. Nuzzo - Champaign IL
David A. Payne - Champaign IL
George M. Whitesides - Newton MA
Younan Xia - Seattle WA

Assignee:

President and Fellows of Harvard College - Cambridge MA
Board of Trustees of the University of Illinois - Urbana IL

International Classification:

H01L 214763

US Classification:

438623, 438624, 438778

Abstract:

A technique for creating patterns of material deposited on a surface involves forming a self-assembled monolayer in a pattern on the surface and depositing, via chemical vapor deposition or via sol-gel processing, a material on the surface in a pattern complementary to the self-assembled monolayer pattern. The material can be a metal, metal oxide, or the like. The surface can be contoured, including trenches or holes, the trenches or holes remaining free of self-assembled monolayer while the remainder of the surface is coated. When exposed to deposition conditions, metal or metal oxide is deposited in the trenches or holes, and remaining portions of the article surface remain free of deposition. The technique finds particular use in creation of conductive metal pathways selectively within holes passing from one side of a substrate to another.

US Patent:

6794315, Sep 21, 2004

Filed:

Mar 6, 2003

Appl. No.:

10/384186

Inventors:

Walter G. Klemperer - Champaign IL
Jason Lee - Liverpool, GB
Erik A. Mikalsen - Urbana IL
David A. Payne - Champaign IL

Assignee:

Board of Trustees of the University of Illinois - Urbana IL

International Classification:

H01L 2131

US Classification:

438785, 438685

Abstract:

A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr (OPr ) to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.

US Patent:

20040238817, Dec 2, 2004

Filed:

Jul 7, 2004

Appl. No.:

10/886185

Inventors:

Walter Klemperer - Champaign IL, US
Jason Lee - Liverpool, GB
Erik Mikalsen - Urbana IL, US
David Payne - Champaign IL, US

Assignee:

The Board of Trustees of the University of Illinois

International Classification:

H01L029/12

US Classification:

257/043000

Abstract:

A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr(OPr)to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.

US Patent:

20070031312, Feb 8, 2007

Filed:

Aug 5, 2005

Appl. No.:

11/198676

Inventors:

David Payne - Champaign IL, US
Brent Clothier - Niskayuna NY, US

International Classification:

C01F 17/00
B32B 19/00
B32B 9/00
B05D 3/12
B05D 1/40
B05D 7/00
B05D 1/18

US Classification:

423263000, 428701000, 428702000, 427372200, 427331000, 427421100, 427240000, 427430100

Abstract:

Disclosed are a variety of ceramics having the formula LnMMnO, where 0≦x≦1 and where Ln is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu or Y; M is Ca, Sr, Ba, Cd, or Pb; manganite precursors for preparing the ceramics; a method for preparing the precursors; and a method for transforming the precursors into uniform, defect-free ceramics having magnetoresistance properties. The manganite precursors contain a sol and are derived from the metal alkoxides: Ln(OR), M(OR)and Mn(OR), where R is Cto Calkyl or Cto Calkoxyalkyl, or Cto Caryl. The preferred ceramics are films prepared by a spin coating method and are particularly suited for incorporation into a device such as an integrated circuit device.

US Patent:

42187230, Aug 19, 1980

Filed:

Mar 26, 1979

Appl. No.:

6/024099

Inventors:

David A. Payne - Champaign IL
Sang M. Park - Urbana IL

Assignee:

University of Illinois Foundation - Urbana IL

International Classification:

C04B 3500
C04B 3546

US Classification:

361321

Abstract:

Liquid phase sintering of a mixture comprising a major amount of barium titanate and a minor amount of a lead germanate composition at temperatures in the range of from about 750. degree. to about 1050. degree. C. provides a heterophasic ceramic body of high dielectric constant and strength, and low dissipation factor. Consequently, relatively inexpensive low melting point metals such as silver and copper can be utilized as electrodes in the fabrication of monolithic multi-layer capacitors.

US Patent:

41582195, Jun 12, 1979

Filed:

Nov 1, 1977

Appl. No.:

5/847588

Inventors:

David A. Payne - Champaign IL
Sang M. Park - Newhall CA

Assignee:

University of Illinois Foundation - Urbana IL

International Classification:

H01G 412

US Classification:

361321

Abstract:

Liquid phase sintering of a mixture comprising a major amount of BaTiO. sub. 3 and a minor amount of Pb. sub. 5 Ge. sub. 3 O. sub. 11 at a temperature of 750. degree. -1050. degree. C. provides a heterophasic ceramic body of high dielectric constant and strength, and low dissipation factor. Consequently, relatively inexpensive low melting point metals such as silver and copper can be utilized as electrodes in the fabrication of monolithic multi-layer ceramic capacitors.

US Patent:

42845211, Aug 18, 1981

Filed:

Jul 23, 1980

Appl. No.:

6/171301

Inventors:

David A. Payne - Champaign IL
Sang M. Park - Urbana IL
Otto C. Jahnke - El Cajon CA

Assignee:

Ferro Corporation - Cleveland OH

International Classification:

C04B 3546
H01B 106

US Classification:

252 623BT

Abstract:

An improved polycrystalline semiconducting ceramic composition can be produced from a novel powder which comprises a reduced alkaline earth metal titanate doped with a hexavalent metal oxide such as (MO. sub. 3) (Bi. sub. 2 O. sub. 3). sub. x where M is tungsten or molybdenum, and x ranges from 0 to 7. This powder, which has a mean particle size on the order of less than 10 microns, may be liquid phase sintered with lead germanate to produce a ceramic composition having an extremely fine grain size. By reducing the earth metal titanate (either chemically or gaseously) prior to the liquid phase sintering with lead germanate, particle or grain size growth is substantially eliminated, and the grain size of the ceramic composition is similar to the original particle size of the earth metal titanate.

US Patent:

43471676, Aug 31, 1982

Filed:

Oct 1, 1980

Appl. No.:

6/192693

Inventors:

David A. Payne - Champaign IL
Sang M. Park - Penn Yan NY

Assignee:

University of Illinois Foundation - Urbana IL

International Classification:

H01B 106

US Classification:

252520

Abstract:

A semiconducting internal boundary layer ceramic composition having a fine grain structure suitable for use in thin-layer multilayer capacitors is made in one step by firing a mixture comprising a major amount of finely divided strontium titanate, a minor amount of a compound containing either strontium or titanium, or an element functionally equivalent thereto, a minor amount of a semiconductor forming ingredient (dopant), the identity of which depends on whether the mixture is rich in strontium or in titanium, and a minor amount of a counterdopant selected from cuprous oxide or silver oxide. When the mixture is rich in titanium, the chemical doping agent used to produce semiconductivity is an oxide of a trivalent metal selected from bismuth, boron, iron, antimony, lanthanum and the rare earth and transition metals. When the mixture is rich in strontium, the dopant is an oxide of a pentavalent or hexavalent metal selected from tungsten (+6), niobium (+5), tantalum (+5), and molybdenum (+6).